HIT HZU5.6Z Datasheet
HZU5.6Z
Silicon Epitaxial Planar Zener Diode for Surge Absorb
Features
• Low capacitance (C=8.5pF max) and can protect ESD of signal line.
• Ultra small Resin Package (URP) is suitable for surface mount design.
Ordering Information
Type No. Laser Mark Package Code
HZU5.6Z 56Z URP
ADE-208-795(Z)
Rev 0
May. 1999
Outline
Cathode mark
Mark
12
56Z
1. Cathode
2. Anode
HZU5.6Z
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Power dissipation Pd
*1
Junction temperature Tj 150 °C
Storage temperature Tstg -55 to +150 °C
Note 1. See Fig.2.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Zener voltage V
Reverse current I
Z
R
Capacitance C — 8.0 8.5 pF VR = 0V, f = 1 MHz
Dynamic resistance r
ESD-Capability
*2
d
8 kV C =150pF, R = 330 Ω, Both forward and
Notes 1. Failure criterion ; IR > 0.5 µA at VR = 2.5V.
5.31 — 5.92 V IZ = 5 mA, 40ms pulse
— — 0.5 µAVR = 2.5V
——80Ω IZ = 5 mA
200 mW
reverse direction 10 pulse
2
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