HIT HZM7.5FA Datasheet
HZM7.5FA
Silicon Epitaxial Planar Zener Diode for Surge Absorb
ADE-208-616 (Z)
Features
• HZM7.5FA has four devices, and can absorb external + and -surge.
• MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. Laser Mark Package Code
HZM7.5FA 75A MPAK-5
Rev 0
Apr. 1998
Outline
1
543
(Top View)
2
1 Cathode
2 Cathode
3 Cathode
4 Anode
5 Cathode
HZM7.5FA
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Power dissipation Pd
*1
Junction temperature Tj 150 °C
Storage temperature Tstg -55 to +150 °C
Note 1. Four device total, With P.C board.
200 mW
Electrical Characteristics (Ta = 25°C)
*2
Item Symbol Min Typ Max Unit Test Condition
Zener voltage V
Reverse current I
Z
R
7.06 — 7.84 V IZ = 5 mA, 40ms pulse
——2 µAVR = 4V
Capacitance C — — 125 pF VR = 0V, f = 1 MHz
Dynamic resistance r
ESD-Capability
*1
d
— 30 — — kV C =150pF, R = 330 Ω, Both forward and
——30Ω IZ = 5 mA
reverse direction 10 pulse
Notes 1. Failure criterion ; IR > 2 µA at VR = 4V.
2. Per one device.
2
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