HIT HZM6.8ZWA Datasheet
HZM6.8ZWA
Silicon Epitaxial Planar Zener Diode for Surge Absorb
ADE-208-613A(Z)
Features
• HZM6.8ZWA has two devices, and can absorb external + and -surge.
• Low capacitance (C=25pF max) and can protect ESD of signal line.
• MPAK Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. Laser Mark Package Code
HZM6.8ZWA 68Z MPAK
Rev 1
Jan. 1999
Outline
3
2
(Top View)
1
1 Cathode
2 Cathode
3 Anode
HZM6.8ZWA
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Power dissipation Pd
*1
Junction temperature Tj 150 °C
Storage temperature Tstg -55 to +150 °C
Note 1. Two device total, See Fig.2.
200 mW
Electrical Characteristics (Ta = 25°C)
*1
Item Symbol Min Typ Max Unit Test Condition
Zener voltage V
Reverse current I
Z
R
6.47 7.00 V IZ = 5 mA, 40ms pulse
2 µAVR = 3.5V
Capacitance C 25 pF VR = 0V, f = 1 MHz
Dynamic resistance r
ESD-Capability
*2
d
20 kV C =150pF, R = 330 Ω, Both forward and
30 Ω IZ = 5 mA
reverse direction 10 pulse
Notes 1. Per one device.
2. Failure criterion ; IR > 2 µA at VR = 3.5V.
2
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