HIT HZM6.8ZMFA Datasheet

HZM6.8ZMFA

Silicon Planar Zener Diode for Surge Absorb

ADE-208-783A(Z)

Features

• HZM6.8ZMFA has four devices in a monolithic, and can absorb surge.

• Low capacitance (C=25pF max) and can protect ESD of signal line.

• MPAK-5 Package is suitable for high density surface mounting and high speed assembly.

Ordering Information

Type No. Laser Mark Package Code

HZM6.8ZMFA 68N MPAK-5

Rev 1

Nov. 1999

Outline

1

543

(Top View)

2

1 Cathode
2 Cathode
3 Cathode
4 Anode
5 Cathode

HZM6.8ZMFA

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Value Unit

Power dissipation Pd

*1

Junction temperature Tj 150 °C
Storage temperature Tstg -55 to +150 °C

Note 1. Four device total, See Fig.2.

200 mW

Electrical Characteristics (Ta = 25°C)

*1

Item Symbol Min Typ Max Unit Test Condition

Zener voltage V
Reverse current I

Z

R

6.47 — 7.00 V IZ = 5 mA, 40ms pulse

——2 µAVR = 3.5V
Capacitance C — — 25 pF VR = 0V, f = 1 MHz
Dynamic resistance r

d

——30Ω IZ = 5 mA
ESD-Capability *2 *3— 25 — — kV C =150pF, R = 330Ω, Both forward and

reverse direction 10 pulse

Notes 1. Per one device.

2. Failure criterion ; I

> 2 µA at VR = 3.5V.

R

3. Between cathode and anode.

2