HIT HZM6.8FA Datasheet
HZM6.8FA
Silicon Epitaxial Planar Zener Diode for Surge Absorb
ADE-208-442A(Z)
September 1996
Features
• HZM6.8FA has four devices, and can absorb external + and -surge.
• MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. Laser Mark Package Code
HZM6.8FA 68A MPAK-5
Rev 1
Outline
1
543
(Top View)
2
1 Cathode
2 Cathode
3 Cathode
4 Anode
5 Cathode
HZM6.8FA
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Power dissipation Pd
*1
Junction temperature Tj 150 °C
Storage temperature Tstg -55 to +150 °C
Note 1. Four device total, With P.C board.
200 mW
Electrical Characteristics (Ta = 25°C)
*1
Item Symbol Min Typ Max Unit Test Condition
Zener voltage V
Reverse current I
Z
R
6.47 — 7.0 V IZ = 5 mA, 40ms pulse
——2 µAVR = 3.5V
Capacitance C — — 130 pF VR = 0V, f = 1 MHz
Dynamic resistance r
d
ESD-Capability — 30 — — kV C =150pF, R = 330 Ω, Both forward and
——30Ω IZ = 5 mA
reverse direction 10 pulse
*2
Notes 1. Per one device.
2. Failure criterion ; IR > 2 µA at VR = 3.5V.
2
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