HIT HZM6.2ZFA Datasheet

HZM6.2ZFA

Silicon Epitaxial Planar Zener Diode for Surge Absorb

ADE-208-593(Z)

Features

• HZM6.2ZFA has four devices, and can absorb external + and -surge.

• Low capacitance (C=8.5pF max) and can protect ESD of signal line.

• MPAK-5 Package is suitable for high density surface mounting and high speed assembly.

Ordering Information

Type No. Laser Mark Package Code

HZM6.2ZFA 62Z MPAK-5

Rev 0

Nov. 1997

Outline

1

543

(Top View)

2

1 Cathode
2 Cathode
3 Cathode
4 Anode
5 Cathode

HZM6.2ZFA

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Value Unit

Power dissipation Pd

*1

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Note 1. Four device total, See Fig.2.

200 mW

Electrical Characteristics (Ta = 25°C)

*1

Item Symbol Min Typ Max Unit Test Condition

Zener voltage V
Reverse current I

Z

R

5.90 — 6.50 V IZ = 5 mA, 40ms pulse

——3 µAVR = 5.5V
Capacitance C — 8.0 8.5 pF VR = 0V, f = 1 MHz
Dynamic resistance r
ESD-Capability

*2

d

— 13 — — kV C =150pF, R = 330 Ω, Both forward and

——60Ω IZ = 5 mA

reverse direction 10 pulse

Notes 1. Per one device.

2. Failure criterion ; IR > 3 µA at VR = 5.5V.

2