HIT HZM5.6ZFA Datasheet

HZM5.6ZFA

Silicon Epitaxial Planar Zener Diode for Surge Absorb

ADE-208-796 (Z)

Features

• HZM5.6ZFA has four devices, and can absorb external + and -surge.

• Low capacitance (C=8.5pF max) and can protect ESD of signal line.

• MPAK-5 Package is suitable for high density surface mounting and high speed assembly.

Ordering Information

Type No. Laser Mark Package Code

HZM5.6ZFA 56Z MPAK-5

Rev 0

May. 1999

Outline

1

543

(Top View)

2

1 Cathode
2 Cathode
3 Cathode
4 Anode
5 Cathode

HZM5.6ZFA

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Value Unit

Power dissipation Pd

*1

Junction temperature Tj 150 °C
Storage temperature Tstg -55 to +150 °C

Note 1. Four device total, See Fig.2.

200 mW

Electrical Characteristics (Ta = 25°C)

*1

Item Symbol Min Typ Max Unit Test Condition

Zener voltage V
Reverse current I

Z

R

5.31 — 5.92 V IZ = 5 mA, 40ms pulse

— — 0.5 µAVR = 2.5V
Capacitance C — 8.0 8.5 pF VR = 0V, f = 1 MHz
Dynamic resistance r
ESD-Capability

*2

d

— 8 — — kV C =150pF, R = 330 Ω, Both forward and

——80Ω IZ = 5 mA

reverse direction 10 pulse

Notes 1. Per one device.

2. Failure criterion ; IR > 0.5µA at VR = 2.5V.

2