HIT HVU132 Datasheet
HVU132
Silicon Epitaxial Planar Pin Diode for High Frequency Switching
ADE-208-321B(Z)
Rev. 2
Feb. 2000
Features
• Low capacitance.(C=0.5pF max)
• Low forward resistance. (rf=2.0Ω max)
• U ltra small R esin P ackage (URP) is suitable for surface mount design.
Ordering Information
Type No. Laser Mark Package Code
HVU132 P2 URP
Outline
Cathode mark
Mark
12
P2
1. Cathode
2. Anode
HVU132
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Peak reverse voltage V
Reverse voltage V
Forward current I
Power dissipation P
RM
R
F
d
Junction temperature Tj 125 °C
Storage temperature Tstg -55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Reverse current I
Forward voltage V
R
F
Capacitance C — — 0.5 pF VR = 1V, f = 1 MHz
Forward resistance r
f
— — 0.1 µAVR = 60V
— — 1.0 V IF = 10 mA
— — 2.0 Ω IF = 10 mA, f = 100 MHz
65 V
60 V
100 mA
150 mW
2
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