HIT HVM187WK Datasheet
HVM187WK
Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator
ADE-208-056E (Z)
Rev. 5
Jun. 1993
Features
• Low forward resistance. (rf = 5.5 max)
• MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. Laser Mark Package Code
HVM187WK H1 MPAK
Pin Arrangement
3
2
(Top View)
1
1 Anode
2 Anode
3 Cathode
HVM187WK
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Reverse voltage V
Forward current I
R
F
Power dissipation Pd* 100 mW
Junction temperature Tj 125 °C
Storage temperature Tstg –55 to +125 °C
Note: Per one device
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V
Reverse current I
F
R
Capacitance C — — 2.4 pF VR = 0V, f = 1MHz
Forward resistance r
f
ESD-Capability — 200 — — V *C = 200pF, Both forward and
Note: Failure criterion; IR ≥ 100nA at VR = 60V
— — 1.0 V IF = 10mA
— — 100 nA VR = 60V
3.5 — 5.5 Ω IF = 10mA, f = 100MHz
60 V
50 mA
reverse direction 1 pulse.
–2
10
–4
10
F
–6
10
–8
10
Forward current I (A)
–10
10
–12
10
0 0.2 0.4
Forward voltage V (V)
0.6 0.8
F
1.0
Fig.1 Forward current Vs. Forward voltage
2
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