HIT HVM14S Datasheet

HVM14S

Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

ADE-208-083D(Z)

Rev.4

Feb.1999

Features

• Low forward resistance. (rf =7.0Ωmax)

• Low capacitance. (C=0.25pF typ)

• MPAK package is suitable for high density surface mounting and high speed assembly.

Ordering Information

Type No. Laser Mark Package Code

HVM14S H6 MPAK

Outline

3

21

(Top View)

1 Cathode2
2 Anode1
3 Cathode1
Anode2

HVM14S

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Value Unit

Reverse voltage V
Forward current I
Power dissipation Pd

R

F

*1

Junction temperature Tj 125 °C
Storage temperature Tstg -55to+125 °C

Note: 1. Two device total.

50 V
50 mA
100 mW

Electrical Characteristics (Ta = 25°C)

*2

Item Symbol Min Typ Max Unit Test Condition

Forward voltage V
Reverse current I

F

R

1.0 V IF = 50 mA
100 nA VR = 50V

Capacitance C  0.25  pF VR = 50V, f = 1 MHz
Forward resistance r
ESD-Capability

*1

f

 200 V C=200pF, Both forward and reverse direction

7 Ω IF = 10 mA, f = 100 MHz

1 pulse

Note: 1. Failure criterion ; IR ≥ 200nA at VR =50 V
Note: 2. Per one device.

2