HIT HVM14 Datasheet

HVM14

Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

ADE-208-082C (Z)

Rev. 3

May 1993

Features

• Low forward resistance. (rf = 7.0 max)

• Low capacitance. (C = 0.25pFtyp)

• MPAK package is suitable for high density surface mounting and high speed assembly.

Ordering Information

Type No. Laser Mark Package Code

HVM14 H5 MPAK

Pin Arrangement

3

2

(Top View)

1

1 NC
2 Anode
3 Cathode

HVM14

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Value Unit

Reverse voltage V
Forward current I

R

F

Power dissipation Pd 100 mW
Junction temperature Tj 125 °C
Storage temperature Tstg –55 to +125 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Condition

Forward voltage V
Reverse current I

F

R

Capacitance C — 0.25 — pF VR = 50V, f = 1MHz
Forward resistance r

f

ESD-Capability — 200 — — V *C = 200pF, Both forward and

Note: Failure criterion; IR ≥ 200nA at VR = 50V

— — 1.0 V IF = 50mA
— — 100 nA VR = 50V

— — 7.0 Ω IF = 10mA, f = 100MHz

50 V
50 mA

reverse direction 1 pulse.

–1

10

–3

10

F

–5

10

–7

10

Forward current I (A)

–9

10

–11

10

0 0.2 0.4

Forward voltage V (V)

0.6 0.8

F

Fig.1 Forward current Vs. Forward voltage

1.0

2