HIT HVC136 Datasheet
HVC136
Silicon Epitaxial Trench Pin Diode for Antenna Switching
ADE-208-799B (Z)
Rev 2
Feb. 2000
Features
• Adopting the trench structure improves low capacitance.(C = 0.45 pF max)
• Low forward resistance. (rf = 2.5Ω max)
• Low operation current.
• Ultra small Flat Package (UFP) is suitable for surface mount design and stable rf characteristics in high
frequency.
Ordering Information
Type No. Laser Mark Package Code
HVC136 P6 UFP
Outline
Cathode mark
Mark
12
P6
1. Cathode
2. Anode
HVC136
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Peak reverse voltage V
Reverse voltage V
Forward current I
Power dissipation P
RM
R
F
d
Junction temperature Tj 125 °C
Storage temperature Tstg -55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Reverse current I
Forward voltage V
R
F
Capacitance C — — 0.45 pF VR = 1V, f = 1 MHz
Forward resistance r
ESD-Capability
*1
f
— 100 — — V C = 200pF , Both forward and reverse
Note : 1. Failure criterion ; IR > 100nA at VR =60 V
— — 0.1 µAVR = 60V
— — 0.9 V IF = 2 mA
— — 2.5 Ω IF = 2mA, f = 100 MHz
65 V
60 V
100 mA
150 mW
direction 1 pulse.
2
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