
HVC134
Silicon Epitaxial Planar Pin Diode for High Frequency Switching
ADE-208-622A(Z)
Rev 0
Feb. 2000
Features
• Low capacitance.(C=0.4pF max)
• Low forward resistance. (rf=2.0Ω max)
• Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information
Type No. Laser Mark Package Code
HVC134 P4 UFP
Outline
Cathode mark
Mark
12
P4
1. Cathode
2. Anode

HVC134
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Peak reverse voltage V
Reverse voltage V
Forward current I
Power dissipation P
RM
R
F
d
Junction temperature Tj 125 °C
Storage temperature Tstg -55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Reverse current I
Forward voltage V
R
F
Capacitance C — — 0.4 pF VR = 1V, f = 1 MHz
Forward resistance r
ESD-Capability
f
*1
— 200 — — V C =100pF, R = 1.5KΩ, Both forward and
Notes 1. Failure criterion ; IR > 0.1 µA at VR = 60V.
— — 0.1 µAVR = 60V
— — 1.0 V IF = 10 mA
— — 2.0 Ω IF = 10 mA, f = 100 MHz
65 V
60 V
100 mA
150 mW
reverse direction 5 pulse
2