HIT HVC133 Datasheet

HVC133

Silicon Epitaxial Planar Pin Diode for High Frequency Switching

ADE-208-423B(Z)

Rev. 2

Feb 2000

Features

• Low capacitance.(C1=1.0pF max)

• Low forward resistance. (rf=0.7Ω max)

• Ultra small Flat Package (UFP) is suitable for surface mount design.

Ordering Information

Type No. Laser Mark Package Code

HVC133 P3 UFP

Outline

Cathode mark

Mark

12

P3

1. Cathode

2. Anode

HVC133

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Value Unit

Reverse voltage V
Power dissipation P

R

d

Junction temperature Tj 125 °C
Storage temperature Tstg -55 to +125 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Condition

Reverse voltage V
Reverse current I
Forward voltage V
Capacitance C

Forward resistance r

R

R

F

1

C

6

f

30 — — V IR = 1µA
— — 100 nA VR = 25V
— — 0.85 V IF = 2 mA
— — 1.0 pF VR = 1V, f = 1 MHz
— — 0.9 VR = 6V, f = 1 MHz
— 0.55 0.7 Ω IF = 2mA, f = 100 MHz

30 V
150 mW

2