HIT HVB14S Datasheet
HVB14S
Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator
ADE-208-484(Z)
Rev 0
December 1996
Features
• Low forward resistance. (rf =7.0Ωmax)
• Low capacitance. (C=0.25pF typ)
• CMPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. Laser Mark Package Code
HVB14S H6 CMPAK
Outline
3
21
(Top View)
1 Cathode
2 Anode
3 Cathode
Anode
HVB14S
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Reverse voltage V
Forward current I
Power dissipation Pd
R
F
*1
Junction temperature Tj 125 °C
Storage temperature Tstg -55Å`+125 °C
Note: 1. Two device total.
50 V
50 mA
100 mW
Electrical Characteristics (Ta = 25°C) *
2
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V
Reverse current I
F
R
Å\ Å\ 1.0 V IF = 50 mA
Å\ Å\ 100 nA VR = 50V
Capacitance C Å\ 0.25 Å\ pF VR = 50V, f = 1 MHz
Forward resistance r
ESD-Capability
*1
f
Å\ 200 Å\ Å\ V C=200pF, Both forward and reverse direction
Å\ Å\ 7 Ω IF = 10 mA, f = 100 MHz
1 pulse
Note: 1. Failure criterion ; IR ≥ 200nA at VR =50 V
Note: 2. Per one device.
2
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