HIT HSU88 Datasheet

HSU88

Silicon Schottky Barrier Diode for Various Detector, Mixer

ADE-208-077G(Z)

Rev 7

Dec 1999

Features

• Low capacitance. (C=0.8pF max)

• Low forward voltage.

• Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.

Ordering Information

Type No. Laser Mark Package Code

HSU88 9 URP

Outline

Cathode mark

Mark

12

9

1. Cathode

2. Anode

HSU88

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Value Unit

Reverse voltage V
Average rectified current I

R

O

Junction temperature Tj 125 °C
Storage temperature Tstg -55 to +125 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Condition

Forward voltage V

Reverse current I

F1

V

F2

R1

I

R2

Capacitance C 0.8 pF VR = 0V, f = 1 MHz
ESD-Capability

*1

 30 V C = 200pF , Both forward and reverse

Notes 1. Failure criterion ; IR ≥ 400nA at VR =2 V

350  420 mV IF = 1 mA
500  580 IF = 10 mA

0.2 µAVR = 2V
10 VR = 10V

10 V
15 mA

direction 1 pulse.

2