HIT HSU83 Datasheet

HSU83

Silicon Epitaxial Planar Diode for High Voltage Switching

ADE-208-307A(Z)

Rev 1

Jun. 1996

Features

• High reverse voltage. (VR = 250V)

• Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.

Ordering Information

Type No. Laser Mark Package Code

HSU83 T URP

Outline

Cathode mark

Mark

12

T

1. Cathode

2. Anode

HSU83

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Value Unit

Peak reverse voltage V
Reverse voltage V
Peak forward current I
Non-Repetitive peak

RM

R

FM

*1

I

FSM

forward surge current
Average rectified current I

O

Junction temperature Tj 125 °C
Storage temperature Tstg –55 to +125 °C

Note: 1. Value at duration of 10msec.

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Condition

Forward voltage V
Reverse current I

F

R1

I

R2

Capacitance C — — 3.0 pF VR = 0V, f = 1 MHz
Reverse recovery

t

rr

time

— — 1.2 V IF = 100 mA
— — 0.2 µAVR = 250V
— — 100 VR = 300V

— — 100 ns IF = IR =30 mA, Irr = 3mA

300 V
250 V
300 mA
2A

100 mA

2