HIT HSU277 Datasheet
HSU277
Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch
ADE-208-018G(Z)
Nov. 1998
Features
• Low forward resistance. (rf = 0.7Ω max)
• U ltra small R esin P ackage (URP) is suitable for surface mount design.
Ordering Information
Type No. Laser Mark Package Code
HSU277 3 URP
Rev 6
Outline
Cathode mark
Mark
12
3
1. Cathode
2. Anode
HSU277
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Reverse voltage V
R
Power dissipation Pd 150 mW
Junction temperature Tj 125 °C
Storage temperature Tstg -45 to +125 °C
Operation temperature Topr -20 to +60 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Reverse voltage V
Forward voltage V
Reverse current I
R
F
R
Capacitance C — — 1.2 pF VR = 6V, f = 1 MHz
Forward resistance r
f
35 — — V IR = 10µA
— — 1.0 V IF = 10 mA
— — 50 nA VR = 25V
— — 0.7 Ω IF = 2 mA, f = 100 MHz
35 V
2
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