HIT HSU276A Datasheet
HSU276A
Silicon Schottky Barrier Diode for Mixer
ADE-208-837(Z)
Rev 0
Feb. 2000
Features
• High forward current, Low capacitance.
• Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.
Ordering Information
Type No. Laser Mark Package Code
HSU276A S5 URP
Outline
Cathode mark
Mark
12
S5
1. Cathode
2. Anode
HSU276A
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Repetitive peak reverse
V
RRM
voltage
Reverse voltage V
Average rectified current I
R
O
Junction temperature Tj 125 °C
Storage temperature Tstg -55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Reverse voltage V
Reverse current I
Forward current I
R
R
F
Capacitance C — — 0.85 pF VR = 0.5V, f = 1 MHz
ESD-Capability
*1
— 30 — — V C=200pF , Both forward and reverse direction
Notes 1. Failure criterion ; IR ≥ 100µA at VR =0.5 V
3——VIR = 1 mA
——50µAVR = 0.5V
35 — — mA VF = 0.5V
5V
3V
30 mA
1 pulse.
2
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