HIT HSU276 Datasheet

HSU276

Silicon Schottky Barrier Diode for Mixer

ADE-208-078F(Z)

Rev 6

Jul. 1996

Features

• High forward current, Low capacitance.

• Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.

Ordering Information

Type No. Laser Mark Package Code

HSU276 3 URP

Outline

Cathode mark

Mark

12

3

1. Cathode

2. Anode

HSU276

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Value Unit

Reverse voltage V
Average rectified current I

R

O

Junction temperature Tj 125 °C
Storage temperature Tstg –55 to +125 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Condition

Reverse voltage V
Reverse current I
Forward current I

R

R

F

Capacitance C — — 0.85 pF VR = 0.5V, f = 1 MHz
ESD-Capability

*1

— 30 — — V C = 200pF , Both forward and reverse

Note: 1. Failure criterion ; IR ≥ 100µA at VR = 0.5 V

3——VIR = 1 mA
——50µAVR = 0.5V
35 — — mA VF = 0.5V

3V
30 mA

direction 1 pulse.

2