HIT HSU227 Datasheet
HSU227
Silicon Schottky Barrier Diode for High Speed Switching
ADE-208-779(Z)
Rev 0
Mar. 1999
Features
• Low capacitance. (C=3.0pF max)
• Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.
Ordering Information
Type No. Laser Mark Package Code
HSU227 S3 URP
Outline
Cathode mark
Mark
12
S3
1. Cathode
2. Anode
HSU227
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Repetitive peak reverse
V
RRM
voltage
Average rectified current I
Non-Repetitive peak
I
o
FSM
*2
forward surge current
Junction temperature Tj 125 °C
Storage temperature Tstg -55 to +125 °C
Note: 1. 10msec sine wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V
Reverse current I
F
R
Capacitance C — 2.45 3.0 pF VR = 1V, 1=1MHz
— 0.29 0.35 V IF = 1mA
— 0.3 2.0 µAVR = 20V
25 V
50 mA
200 mA
2
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