HIT HSU119 Datasheet

HSU119

Silicon Epitaxial Planar Diode for High Speed Switching

ADE-208-444(Z)

Rev 0

Feb. 1997

Features

• Low capacitance. (C = 2.0pF max)

• Short reverse recovery time. (trr = 3.0ns max)

• Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.

Ordering Information

Type No. Laser Mark Package Code

HSU119 H1 URP

Outline

Cathode mark

Mark

12

H1

1. Cathode

2. Anode

HSU119

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Value Unit

Peak reverse voltage V
Reverse voltage V
Average forward current I
Peak rectified current I
Non-Repetitive peak

RM

R

O

FM

*1

I

FSM

forward surge current
Junction temperature Tj 125 °C
Storage temperature Tstg –55 to +125 °C

Note: 1. Within 1µ s forward surge current.

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Condition

Forward voltage V

Reverse current I

F1

V

F2

R

Capacitance C — — 2.0 pF VR = 0V, f = 1 MHz
Reverse recovery

*1

time

t

rr

Note: 1. Reverse recovery time test circuit

— — 0.8 V IF = 10 mA
— — 1.2

— — 0.1 µAVR = 80V

— — 3.0 ns IF = 10 mA, VR = 6V RL= 50Ω

85 V
80 V
100 mA
300 mA
4A

I

= 100 mA

F

DC

Ro =50

Ω

Pulse
Generator

Supply

0.1µF

Trigger

Ω

3k

Sampling
Oscilloscope

Rin =50

Ω

2