HIT HSM88WK Datasheet
HSM88WK
Silicon Schottky Barrier Diode for Balanced Mixer
ADE-208-0489F (Z)
Features
• Proof against high voltage.
• MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. Laser Mark Package Code
HSM88WK C4 MPAK
Rev 6
Jul 1998
Outline
3
2
(Top View)
1
1 Anode
2 Anode
3 Cathode
HSM88WK
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Reverse voltage V
Average rectified current I
R
*1
O
Junction temperature Tj 125 °C
Storage temperature Tstg –55 to +125 °C
Notes 1.Per one device
10 V
15 mA
Electrical Characteristics (Ta = 25°C)
*1
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V
Reverse current I
F1
V
F2
R1
I
R2
350 — 420 mV IF = 1 mA
500 — 580 IF = 10 mA
— — 0.2 µAVR = 2V
——10 VR = 10V
Capacitance C — — 0.85 pF VR = 0V, f = 1 MHz
Capacitance deviation ∆C — — 0.10 pF VR = 0V, f = 1 MHz
Forward voltage deviation ∆V
ESD-Capability
*2
— 30 — — V C=200pF , Both forward and reverse
——10mVIF = 10 mA
F
direction 1 pulse.
Notes 1. Per one device
Notes 2. Failure criterion ; IR ≥ 400nA at VR =2 V
2
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