HIT HSM88AS Datasheet
HSM88AS
Silicon Schottky Barrier Diode for Balanced Mixer
ADE-208-046E (Z)
Features
• Proof against high voltage.
• MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. Laser Mark Package Code
HSM88AS C1 MPAK
Rev 5
Jul 1998
Outline
3
2
(Top View)
1
1 Cathode 2
2 Anode 1
3 Cathode 1
Anode 2
HSM88AS
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Reverse voltage V
Average rectified current I
R
*1
O
Junction temperature Tj 125 °C
Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V
Reverse current I
F1
V
F2
R1
I
R2
Capacitance C — — 0.85 pF VR = 0V, f = 1 MHz
Capacitance deviation ∆C — — 0.10 pF VR = 0V, f = 1 MHz
Forward voltage deviation ∆V
ESD-Capability
*1
— 30 — — V C=200pF , Both forward and reverse
Notes 1. Failure criterion ; IR ≥ 400nA at VR =2 V
350 — 420 mV IF = 1 mA
500 — 580 IF = 10 mA
— — 0.2 µAVR = 2V
——10 VR = 10V
——10mVIF = 10 mA
F
10 V
15 mA
direction 1 pulse.
2
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