HSM83
Silicon Epitaxial Planar Diode for High Voltage Switching
ADE-208-091D(Z)
Features
• High reverse voltage. (VR = 250V)
• MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. Laser Mark Package Code
HSM83 F7 MPAK
Rev 4
Jun. 1996
Outline
3
2
(Top View)
1
1 NC
2 Anode
3 Cathode
HSM83
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Peak reverse voltage V
Reverse voltage V
Peak forward current I
Non-Repetitive peak
RM
R
FM
*1
I
FSM
forward surge current
Average rectified current I
O
Junction temperature Tj 125 °C
Storage temperature Tstg –55 to +125 °C
Note: 1. Value at duration of 10msec.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V
Reverse current I
F
R1
I
R2
Capacitance C — 1.5 3.0 pF VR = 0V, f = 1 MHz
Reverse recovery
t
rr
time
— — 1.2 V IF = 100 mA
— — 0.2 µAVR = 250V
— — 100 VR = 300V
— — 100 ns IF = IR = 30 mA, Irr = 3mA, RL = 100Ω
300 V
250 V
300 mA
2A
100 mA
2