HIT HSM276SR Datasheet
HSM276SR
Silicon Schottky Barrier Diode for Balanced Mixer
ADE-208-040D (Z)
Aug. 1994
Features
• High forward current, Low capacitance.
• HSM276SR which is interconnected in series configuration is designed for balanced mixer use.
• MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. Laser Mark Package Code
HSM276SR C9 MPAK
Rev. 4
Pin Arrangement
3
2
(Top View)
1
1 Anode 1
2 Cathode 2
3 Cathode 1
Anode 2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Reverse voltage V
Average forward current IO*30mA
Junction temperature Tj 125 °C
Storage temperature Tstg –55 to +125 °C
Note: Per one device
R
3V
HSM276SR
Electrical Characteristics (Ta = 25°C)*
1
Item Symbol Min Typ Max Unit Test Condition
Reverse voltage V
Reverse current I
Forward current I
R
R
F
3.0 — — V IR = 1mA
——50µAVR = 0.5V
35 — — mA VF = 0.5V
Capacitance C — — 0.90 pF VR = 0.5V, f = 1MHz
Capacitance deviation ∆C — — 0.10 pF VR = 0.5V, f = 1MHz
ESD Capability — 30 — — V *2C = 200pF, Both forward and
reverse direction 1 pulse
Notes: 1. Per one device
2. Failure Criterrion; I
≥ 100µA at VR = 0.5V
R
–1
10
–2
10
F
–3
10
Forward current I (A)
–4
10
–5
10
0.2
0
0.4
0.6
Forward voltage V (V)
0.8
F
Fig.1 Forward current Vs. Forward voltage
1.0
2
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