HIT HSM276S Datasheet
HSM276S
Silicon Schottky Barrier Diode for Balanced Mixer
ADE-208-039E (Z)
Features
• High forward current, Low capacitance.
• HSM276S which is interconnected in series configuration is designed for balanced mixer use.
• MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. Laser Mark Package Code
HSM276S C2 MPAK
Rev 5
Jul 1998
Outline
3
2
(Top View)
1
1 Cathode 2
2 Anode 1
3 Cathode 1
Anode 2
HSM276S
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Reverse voltage V
Average rectified current I
R
O
Junction temperature Tj 125 °C
Storage temperature Tstg –55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Reverse voltage V
Reverse current I
Forward current I
R
R
F
Capacitance C — — 0.90 pF VR = 0.5V, f = 1 MHz
Capacitance deviation ∆ C — — 0.10 pF VR = 0.5V, f = 1 MHz
ESD-Capability
*1
— 30 — — V C=200pF , Both forward and reverse
Notes 1. Failure criterion ; IR ≥ 100µA at VR =0.5 V
3.0 — — V IR = 1 mA
——50µAVR = 0.5V
35——mAVF = 0.5V
3V
30 mA
direction 1 pulse.
2
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