HIT HSM2694 Datasheet
HSM2694
Silicon Epitaxial Planar Diode for Tuner Band Switch
ADE-208-095A (Z)
Features
• Low forward resistance. (rf = 0.9 max)
• Low capacitance. (C = 1.2pFmax)
• MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. Laser Mark Package Code
HSM2694 B3 MPAK
Rev. 1
Jun. 1993
Pin Arrangement
3
2
(Top View)
1
1 Cathode
2 Cathode
3 Anode
HSM2694
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Reverse voltage V
R
Power dissipation Pd* 150 mW
Junction temperature Tj 125 °C
Storage temperature Tstg –45 to +125 °C
Operation temperature Topr –20 to +60 °C
Note: Two device total
Electrical Characteristics (Ta = 25°C)*
Item Symbol Min Typ Max Unit Test Condition
Reverse voltage V
Reverse current I
Forward voltage V
R
R
F
Capacitance C — — 1.2 pF VR = 6V, f = 1MHz
Forward resistance r
f
Note: Per one device
35 — — V IR = 10µA
——50nAV
— — 1.0 V IF = 10mA
— — 0.9 Ω IF = 2mA, f = 100MHz
35 V
= 25V
R
2.0
f = 100MHz
1.5
Ω
f
1.0
Forward resistance r ( )
0.5
0
–4
10
Forward current I (A)
10
–3
F
10
–2
Fig.1 Forward resistance Vs. Forward current
2
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