HIT HSM198S Datasheet
HSM198S
Silicon Schottky Barrier Diode forVarious Detector,
High speed switching
ADE-208-090B (Z)
Features
• Detection efficiency is very good.
• Small temperature coefficient.
• HSM198S which is interconnected in series configuration is designed for balanced mixer use.
• MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. Laser Mark Package Code
HSM198S C6 MPAK
Rev. 2
Jun. 1993
Pin Arrangement
3
2
(Top View)
1
1 Cathode 2
2 Anode 1
3 Cathode 1
Anode 2
HSM198S
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Reverse voltage V
R
Average forward current IO*30mA
Junction temperature Tj 125 °C
Storage temperature Tstg –55 to +125 °C
Note: Two device total
10 V
Electrical Characteristics (Ta = 25°C)*
1
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V
Reverse current I
Forward current I
F
R
F
— — 1.1 V IF = 5mA
——70µAVR = 6V
4.5 — — mA VF = 1V
Capacitance C — — 1.5 pF VR = 1V, f = 1MHz
Capacitance deviation ∆V
F
——10mVI
= 5mA
F
Rectifier efficiency η 70 — — % Vin = 2Vrms, f = 40MHz,
R
= 5kΩ, CL = 20pF
L
ESD Capability — 30 — — V *2C = 200pF, Both forward and
reverse direction 1 pulse
Notes: 1. Per one device
2. Failure Criterrion; I
≥ 140 µA at VR = 6V
R
2
Loading...