HIT HSM126S Datasheet

HSM126S

Silicon Schottky Barrier Diode for System Protection

ADE-208-111C (Z)

May 1995

Features

• HSM126S which is connected in series configuration enable to protect electric systems from miss-

operation against external + and – surge.

• Low VF and low leakage current.

• MPAK package is suitable for high density surface mounting and high speed assembly.

Ordering Information

Type No. Laser Mark Package Code

HSM126S S14 MPAK

Rev. 3

Pin Arrangement

3

2

(Top View)

1

1 Cathode 2
2 Anode 1
3 Cathode 1
Anode 2

HSM126S

Absolute Maximum Ratings (Ta = 25°C)*

3

Item Symbol Value Unit

Repetitive peak reverse voltage V
Average forward current IO*
Non-Repetitive peak forward surge current I

FSM

RRM

1

2

*

20 V
200 mA

2A
Junction temperature Tj 125 °C
Storage temperature Tstg –55 to +125 °C

Notes: 1. Sine wave, Two device total

2. 50Hz half sine wave 1 pulse

3. Per one device

Electrical Characteristics (Ta = 25°C)*

Item Symbol Min Typ Max Unit Test Condition

Reverse current I
Forward voltage V

R

F

Capacitance C — 40 — pF VR = 0V, f = 1MHz
Note: Per one device

— — 2.0 µAVR = 5V
— — 0.35 V IF = 10mA

10

Pulse test

1.0

F

–1

10

Ta = 75°C

–2

10

Ta = 25°C

–3

Forward current I (A)

10

–4

10

–5

10

0 0.2 0.4

Forward voltage V (V)

0.6 0.8

F

Fig.1 Forward current Vs. Forward voltage

1.0

2