HIT HSM124S Datasheet
HSM124S
Silicon Epitaxial Planar Diode for Switching
ADE-208-041D (Z)
Features
• Low reverse current.
• MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. Laser Mark Package Code
HSM124S A1 MPAK
Rev. 4
Aug. 1995
Pin Arrangement
3
2
(Top View)
1
1 Cathode 2
2 Anode 1
3 Cathode 1
Anode 2
HSM124S
Absolute Maximum Ratings*2 (Ta = 25°C)
Item Symbol Value Unit
Peak reverse voltage V
Reverse voltage V
Peak forward current I
Non-Repetitive peak forward surge current I
Average forward current I
FM
FSM
O
RM
R
1
*
Junction temperature Tj 125 °C
Storage temperature Tstg –55 to +125 °C
Notes: 1. Within 1µs forward surge current.
2. Per one device
Electrical Characteristics* (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V
Reverse current I
F1
V
F2
V
F3
R
Capacitance C — — 4.0 pF VR = 0V, f = 1MHz
Reverse recovery time t
rr
Note: Per one device
— — 1.0 V IF = 10mA
— — 1.0 IF = 50mA
— — 1.2 IF = 100mA
— — 0.01 µAVR = 80V
— — 100 ns IF = 10mA, VR = 6V, RL = 50Ω
80 V
85 V
300 mA
4A
100 mA
2
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