
HSK83
Silicon Epitaxial Planar Diode for High Voltage Switching
ADE-208-169C(Z)
Features
• High reverse voltage. (VR=250V)
• LLD package is suitable for high density surface mounting and high speed assembly
Ordering Information
Type No. Cathode band 2nd band Package Code
HSK83 White Verdure LLD
Rev 3
Dec. 1998
Outline
Cathode band
12
2nd. band
Cathode band
12
2nd. band
1. Cathode
2. Anode

HSK83
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Peak reverse voltage V
Reverse voltage V
Peak forward current I
Non-Repetitive peak
RM
R
FM
*1
I
FSM
forward surge current
Average rectified current I
O
Junction temperature Tj 175 °C
Storage temperature Tstg -65 to +175 °C
Note 1. Value at duration of 1s.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V
Reverse current I
F
R1
I
R2
Capacitance C — 1.5 — pF VR = 0V, f = 1 MHz
Reverse recovery
t
rr
time
— — 1.0 V IF = 100 mA
— — 0.1 µAVR = 250V
— — 100 VR = 300V
— — 100 ns IF = IR =30 mA, Irr = 3mA, RL = 100Ω
300 V
250 V
625 mA
1A
150 mA
2