HIT HM62V8512BLFP-7, HM62V8512BLFP-7SL, HM62V8512BLFP-7UL, HM62V8512BLFP-8, HM62V8512BLFP-8SL Datasheet
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HM62V8512B Series
4 M SRAM (512-kword × 8-bit)
ADE-203-905G (Z)
Rev. 6.0
Mar. 31, 2000
Description
The Hitachi HM62V8512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density,
higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The
device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II is available for high
density mounting. The HM62V8512B is suitable for battery backup system.
Features
• Single 3.0 V supply: 2.7 V to 3.6 V
• Access time: 70/85 ns (max)
• Power dissipation
Active: 15 mW/MHz (typ)
Standby: 3 µW (typ)
• Completely static memory. No clock or timing strobe required
• Equal access and cycle times
• Common data input and output: Three state output
• Directly LV-TTL compatible: All inputs
• Battery backup operation
HM62V8512B Series
Ordering Information
Type No. Access time Package
HM62V8512BLFP-7
HM62V8512BLFP-8
HM62V8512BLFP-7SL
HM62V8512BLFP-8SL
HM62V8512BLFP-7UL
HM62V8512BLFP-8UL
HM62V8512BLTT-7
HM62V8512BLTT-8
HM62V8512BLTT-7SL
HM62V8512BLTT-8SL
HM62V8512BLTT-7UL
HM62V8512BLTT-8UL
HM62V8512BLRR-7
HM62V8512BLRR-8
HM62V8512BLRR-7SL
HM62V8512BLRR-8SL
HM62V8512BLRR-7UL
HM62V8512BLRR-8UL
70 ns
85 ns
70 ns
85 ns
70 ns
85 ns
70 ns
85 ns
70 ns
85 ns
70 ns
85 ns
70 ns
85 ns
70 ns
85 ns
70 ns
85 ns
525-mil 32-pin plastic SOP (FP-32D)
400-mil 32-pin plastic TSOP II (TTP-32D)
400-mil 32-pin plastic TSOP II reverse (TTP-32DR)
2
Pin Arrangement
HM62V8512BLFP Series HM62V8512BLTT Series
HM62V8512B Series
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
(Top view)
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
V
CC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
(Top view)
HM62V8512BLRR Series
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
V
CC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
Pin Description
Pin name Function
A0 to A18 Address input
I/O0 to I/O7 Data input/output
CS Chip select
OE Output enable
WE Write enable
V
CC
V
SS
Power supply
Ground
(Top view)
3
HM62V8512B Series
Block Diagram
A18
A16
A1
A0
A2
A12
A14
A3
A7
A6
Row
Decoder
V
CC
V
SS
•
•
•
•
•
Memory Matrix
×
1,024 4,096
I/O0
I/O7
CS
WE
OE
•
•
Input
Data
Control
Timing Pulse Generator
Read/Write Control
Column I/O
Column Decoder
A13A17A15A8 A10A11
•
•
•
•
A5A9 A4
4
HM62V8512B Series
Function Table
WE CS OE Mode VCC current Dout pin Ref. cycle
× H × Not selected I
H L H Output disable I
H L L Read I
L L H Write I
L L L Write I
, I
SB
SB1
CC
CC
CC
CC
Note: ×: H or L
Absolute Maximum Ratings
Parameter Symbol Value Unit
Power supply voltage V
Voltage on any pin relative to V
SS
Power dissipation P
CC
V
T
T
Operating temperature Topr –20 to +70 °C
Storage temperature Tstg –55 to +125 °C
Storage temperature under bias Tbias –20 to +85 °C
Notes: 1. –3.0 V for pulse half-width ≤ 30 ns
2. Maximum voltage is 4.6 V
–0.5 to +4.6 V
–0.5*1 to VCC + 0.5*
1.0 W
High-Z —
High-Z —
Dout Read cycle
Din Write cycle (1)
Din Write cycle (2)
2
V
Recommended DC Operating Conditions (Ta = –20 to +70°C)
Parameter Symbol Min Typ Max Unit
Supply voltage V
Input high voltage V
Input low voltage V
CC
V
SS
IH
IL
Note: 1. –3.0 V for pulse half-width ≤ 30 ns
2.7 3.0 3.6 V
000V
2.0 — VCC + 0.3 V
1
–0.3*
— 0.8 V
5
HM62V8512B Series
DC Characteristics (Ta = –20 to +70°C, VCC = 2.7 V to 3.6 V, VSS = 0 V)
Parameter Symbol Min Typ*1Max Unit Test conditions
Input leakage current |I
Output leakage current |ILO|——1µA CS = VIH or OE = VIH or
Operating power
supply current: DC
Operating
power supply current
Operating power
supply current
Standby power supply
current: DC
Standby power supply
current (1): DC
Output low voltage V
Output high voltage V
Notes: 1. Typical values are at VCC = 3.0 V, Ta = +25°C and specified loading, and not guaranteed.
2. This characteristics is guaranteed only for L version.
3. This characteristics is guaranteed only for L-SL version.
4. This characteristics is guaranteed only for L-UL version.
|——1µA Vin = VSS to V
LI
WE = V
I
CC
——10mACS = VIL,
others = V
I
CC1
— — 40 mA Min cycle, duty = 100%
CS = V
I
= 0 mA
I/O
I
CC2
— 5 10 mA Cycle time = 1 µs,
duty = 100%
I
= 0 mA, CS ≤ 0.2 V
I/O
V
≥ VCC – 0.2 V,
IH
V
≤ 0.2 V
IL
I
SB
I
SB1
— 0.1 0.3 mA CS = V
—1*240*
2
µA Vin ≥ 0 V,
CS ≥ V
—1*320*
—1*45*
OL
— — 0.4 V IOL = 2.1 mA
3
µA
4
µA
— — 0.2 V IOL = 100 µA
OH
VCC – 0.2 — — V IOH = –100 µA
2.4 — — V IOH = –1.0 mA
CC
, V
= VSS to V
IL
I/O
, I
IH/VIL
, others = VIH/V
IL
IH
– 0.2 V
CC
= 0 mA
I/O
CC
IL
Capacitance (Ta = +25°C, f = 1 MHz)
Parameter Symbol Typ Max Unit Test conditions
Input capacitance*
1
Input/output capacitance*1C
Note: 1. This parameter is sampled and not 100% tested.
6
Cin — 8 pF Vin = 0 V
I/O
—10pFV
= 0 V
I/O
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