HIT HM628512CLRR-7, HM628512CLRR-7SL, HM628512CLTT-5, HM628512CLTT-5SL, HM628512CLTT-7 Datasheet
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HM628512C Series
4 M SRAM (512-kword × 8-bit)
ADE-203-1212 (Z)
Preliminary
Rev. 0.0
Sep. 12, 2000
Description
The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density,
higher performance and low power consumption by employing Hi-CMOS process technology. The device,
packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil plastic DIP, is
available for high density mounting. The HM628512C is suitable for battery backup system.
Features
• Single 5 V supply
• Access time: 55/70 ns (max)
• Power dissipation
Active: 50 mW/MHz (typ)
Standby: 10 µW (typ)
• Completely static memory. No clock or timing strobe required
• Equal access and cycle times
• Common data input and output: Three state output
• Directly TTL compatible: All inputs and outputs
• Battery backup operation
Preliminary: The specification of this device are subject to change without notice. Please contact your
nearest Hitachi’s Sales Dept. regarding specification.
HM628512C Series
Ordering Information
Type No. Access time Package
HM628512CLP-5
HM628512CLP-7
HM628512CLP-5SL
HM628512CLP-7SL
HM628512CLFP-5
HM628512CLFP-7
HM628512CLFP-5SL
HM628512CLFP-7SL
HM628512CLTT-5
HM628512CLTT-7
HM628512CLTT-5SL
HM628512CLTT-7SL
HM628512CLRR-5
HM628512CLRR-7
HM628512CLRR-5SL
HM628512CLRR-7SL
55 ns
70 ns
55 ns
70 ns
55 ns
70 ns
55 ns
70 ns
55 ns
70 ns
55 ns
70 ns
55 ns
70 ns
55 ns
70 ns
600-mil 32-pin plastic DIP (DP-32)
525-mil 32-pin plastic SOP (FP-32D)
400-mil 32-pin plastic TSOP II (TTP-32D)
400-mil 32-pin plastic TSOP II reverse (TTP-32DR)
2
Pin Arrangement
HM628512C Series
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
32-pin DIP
32-pin SOP
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
(Top view)
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
V
CC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
32-pin TSOP
(Top view)
32-pin TSOP (reverse)
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
V
CC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
Pin Description
Pin name Function
A0 to A18 Address input
I/O0 to I/O7 Data input/output
CS Chip select
OE Output enable
WE Write enable
V
CC
V
SS
Power supply
Ground
(Top view)
3
HM628512C Series
Block Diagram
LSB
MSB
A11
A9
A8
A15
A18
A10
A13
A17
A16
A14
A12
I/O0
I/O7
Row
Decoder
Input
Data
Control
•
•
•
•
•
•
•
LSB
Memory Matrix
2,048 2,048
Column Decoder
A3A2A1A0 A6A5
•
•
×
Column I/O
A4 A7
MSB
V
CC
V
SS
•
•
CS
WE
OE
4
Timing Pulse Generator
Read/Write Control
HM628512C Series
Function Table
WE CS OE Mode VCC current Dout pin Ref. cycle
× H × Not selected I
H L H Output disable I
H L L Read I
L L H Write I
L L L Write I
, I
SB
SB1
CC
CC
CC
CC
Note: ×: H or L
Absolute Maximum Ratings
Parameter Symbol Value Unit
Power supply voltage V
Voltage on any pin relative to V
SS
Power dissipation P
CC
V
T
T
Operating temperature Topr –20 to +70 °C
Storage temperature Tstg –55 to +125 °C
Storage temperature under bias Tbias –20 to +85 °C
Notes: 1. VT min: –3.0 V for pulse half-width ≤ 30 ns.
2. Maximum voltage is 7.0 V.
–0.5 to +7.0 V
–0.5*1 to VCC + 0.3*
1.0 W
High-Z —
High-Z —
Dout Read cycle
Din Write cycle (1)
Din Write cycle (2)
2
V
Recommended DC Operating Conditions (Ta = –20 to +70°C)
Parameter Symbol Min Typ Max Unit
Supply voltage V
Input high voltage V
Input low voltage V
CC
V
SS
IH
IL
Note: 1. VIL min: –3.0 V for pulse half-width ≤ 30 ns.
4.5 5.0 5.5 V
000V
2.2 — VCC + 0.3 V
*1
–0.3
— 0.8 V
5
HM628512C Series
DC Characteristics (Ta = –20 to +70°C, VCC = 5 V ±10% , VSS = 0 V)
Parameter Symbol Min Typ*1Max Unit Test conditions
Input leakage current |I
Output leakage current |ILO|——1µA CS = VIH or OE = VIH or
Operating power supply current: DC I
Operating power supply current I
Operating power supply current I
Standby power supply current: DC I
Standby power supply current (1): DC I
Output low voltage V
Output high voltage V
Notes: 1. Typical values are at VCC = 5.0 V, Ta = +25°C and specified loading, and not guaranteed.
2. This characteristics is guaranteed only for L version.
3. This characteristics is guaranteed only for L-SL version.
|——1µA Vin = VSS to V
LI
WE = V
CC
— 8 15 mA CS = VIL,
IL
others = V
CC1
CC2
— 40 60 mA Min cycle, duty = 100%
CS = V
I
I/O
, others = VIH/V
IL
= 0 mA
— 10 20 mA Cycle time = 1 µs,
duty = 100%
I
= 0 mA, CS ≤ 0.2 V
I/O
V
≥ VCC – 0.2 V, VIL ≤ 0.2 V
IH
SB
SB1
—1 3 mACS = V
IH
—2*2100*2µA Vin ≥ 0 V, CS ≥ VCC – 0.2 V
—2*350*3µA
OL
OH
— — 0.4 V IOL = 2.1 mA
2.4 — — V IOH = –1.0 mA
, V
I/O
IH/VIL
CC
= VSS to V
, I
= 0 mA
I/O
CC
IL
Capacitance (Ta = +25°C, f = 1 MHz)
Parameter Symbol Typ Max Unit Test conditions
Input capacitance*
1
Input/output capacitance*1C
Note: 1. This parameter is sampled and not 100% tested.
Cin — 8 pF Vin = 0 V
I/O
—10pFV
= 0 V
I/O
6
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