HIT HM628512BFP-5, HM628512BFP-7 Datasheet

HM628512BFP Series

4 M SRAM (512-kword × 8-bit)

ADE-203-1078B (Z)

Rev. 2.0

Nov. 23, 1999

Description

The Hitachi HM628512BFP is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density,
higher performance and low power consumption by employing Hi-CMOS process technology. It is packaged
in standard 32-pin SOP.

Features

• Single 5 V supply

• Access time: 55/70 ns (max)

• Power dissipation
 Active: 50 mW/MHz (typ)
 Standby: 2 mW (max)

• Completely static memory. No clock or timing strobe required

• Equal access and cycle times

• Common data input and output: Three state output

• Directly TTL compatible: All inputs and outputs

Ordering Information

Type No. Access time Package

HM628512BFP-5
HM628512BFP-7

55 ns
70 ns

525-mil 32-pin plastic SOP (FP-32D)

HM628512BFP Series

Pin Arrangement

32-pin SOP

A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V

SS

Pin Description

Pin name Function

A0 to A18 Address input
I/O0 to I/O7 Data input/output

CS Chip select
OE Output enable
WE Write enable

V

CC

V

SS

Power supply
Ground

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16

(Top view)

32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17

V

CC

A15
A17

WE

A13
A8
A9
A11

OE

A10

CS

I/O7
I/O6
I/O5
I/O4
I/O3

2

Block Diagram

A18
A16

A1
A0

A2
A12
A14

A3

A7

A6

Row
Decoder

HM628512BFP Series

V

CC

V

SS

•

•

•

•

•

Memory Matrix

×

1,024 4,096

I/O0

I/O7

CS

WE

OE

•

•

Input
Data
Control

Timing Pulse Generator

Read/Write Control

Column I/O

Column Decoder

A17

A13

A15

A9

A8

•

•

•

•

A10A11

A4

A5

3

HM628512BFP Series

Function Table

WE CS OE Mode VCC current Dout pin Ref. cycle

× H × Not selected I
H L H Output disable I
H L L Read I
L L H Write I
L L L Write I

, I

SB

SB1

CC

CC

CC

CC

Note: ×: H or L

Absolute Maximum Ratings

Parameter Symbol Value Unit

Power supply voltage V
Voltage on any pin relative to V

SS

Power dissipation P

CC

V

T

T

Operating temperature Topr –20 to +70 °C
Storage temperature Tstg –55 to +125 °C
Storage temperature under bias Tbias –20 to +85 °C

Notes: 1. –3.0 V for pulse half-width ≤ 30 ns

2. Maximum voltage is 7.0 V

–0.5 to +7.0 V
–0.5*1 to VCC + 0.3*

1.0 W

High-Z —
High-Z —
Dout Read cycle
Din Write cycle (1)
Din Write cycle (2)

2

V

Recommended DC Operating Conditions (Ta = –20 to +70°C)

Parameter Symbol Min Typ Max Unit

Supply voltage V

Input high voltage V
Input low voltage V

CC

V

SS

IH

IL

Note: 1. –3.0 V for pulse half-width ≤ 30 ns

4

4.5 5.0 5.5 V
000V

2.2 — VCC + 0.3 V

*1

–0.3

— 0.8 V