HM5212325F-B60
128M LVTTL interface SDRAM
100 MHz
1-Mword × 32-bit × 4-bank
PC/100 SDRAM
ADE-203-1053A (Z)
Rev. 1.0
Oct. 18, 1999
Description
The Hitachi HM5212325F is a 128-Mbit SDRAM organized as 1048576-word × 32-bit × 4-bank. All inputs
and outputs are referred to the rising edge of the clock input. It is packaged in standard 108 bump BGA.
Features
• Single chip wide bit solution (× 32)
• 3.3 V power supply
• Clock frequency: 100 MHz (max)
• LVTTL interface
• Extremely small foot print: 1.27 mm pitch
Package: BGA (BP-108)
• 4 banks can operate simultaneously and independently
• Burst read/write operation and burst read/single write operation capability
• Programmable burst length: 4/8/full page
• 2 variations of burst sequence
Sequential (BL = 4/8/full page)
Interleave (BL = 4/8)
• Programmable CAS latency: 2/3
• Byte control by DQMB
• Refresh cycles: 4096 refresh cycles/64 ms
• 2 variations of refresh
Auto refresh
Self refresh
HM5212325F-B60
2
• Full page burst length capability
Sequential burst
Burst stop capability
Ordering Information
Type No. Frequency CAS latency Package
HM5212325FBP-B60* 100 MHz 3 14 mm × 22 mm 108 bump BGA (BP-108)
Note: 66 MHz operation at CAS latency = 2.
HM5212325F-B60
4
Pin Description
Pin name Function
A0 to A13 Address input
Row address A0 to A11
Column address A0 to A7
Bank select address A12/A13 (BS)
DQ0 to DQ31 Data-input/output
CS Chip select
RAS Row address strobe command
CAS Column address strobe command
WE Write enable
DQMB0 to DQMB3 Byte data mask*
1
CLK Clock input
CKE Clock enable
V
CC
Power supply
V
SS
Ground
Open Open*
2
Note: 1. DQMB0: DQ0 to DQ7
DQMB1: DQ8 to DQ15
DQMB2: DQ16 to DQ23
DQMB3: DQ24 to DQ31
2. Don’t connect. Internally connected with die.