HM5164165 Series, HM5165165 Series
9
DC Characteristics (HM5164165 Series)
HM5164165
-5 -6
Parameter Symbol Min Max Min Max Unit Test conditions
Operating current*
1, *2
I
CC1
— 120 — 110 mA tRC = min
Standby current I
CC2
— 2 — 2 mA TTL interface
RAS, UCAS, LCAS = V
IH
Dout = High-Z
— 0.5 — 0.5 mA CMOS interface
RAS, UCAS,
LCAS V
CC
– 0.2 V
Dout = High-Z
Standby current
(L-version)
I
CC2
— 150 — 150 µA CMOS interface
RAS, UCAS,
LCAS V
CC
– 0.2 V
Dout = High-Z
RAS-only refresh current*
2
I
CC3
— 120 — 110 mA tRC = min
Standby current*
1
I
CC5
—5 —5 mARAS = V
IH
UCAS, LCAS = V
IL
Dout = enable
CAS-before-RAS refresh
current
I
CC6
— 120 — 110 mA tRC = min
EDO page mode current*
1, *3
I
CC7
— 120 — 110 mA RAS = VIL , CAS cycle,
t
HPC
= t
HPC
min
Battery backup current*
4
(Standby with CBR refresh)
(L-version)
I
CC10
— 500 — 500 µA CMOS interface
Dout = High-Z
CBR refresh: t
RC
= 31.3 µs
t
RAS
0.3 µs
Self refresh mode current
(L-version)
I
CC11
— 400 — 400 µA CMOS interface
RAS, UCAS, LCAS 0.2 V
Dout = High-Z
Input leakage current I
LI
–5 5 –5 5 µA 0 V Vin VCC + 0.3 V
Output leakage current I
LO
–5 5 –5 5 µA 0 V Vout V
CC
Dout = disable
Output high voltage V
OH
2.4 V
CC
2.4 V
CC
V High Iout = –2 mA
Output low voltage V
OL
0 0.4 0 0.4 V Low Iout = 2 mA
Notes: 1. ICC depends on output load condition when the device is selected. ICC max is specified at the output
open condition.
2. Address can be changed once or less while RAS = V
IL
.
3. Measured with one sequential address change per EDO cycle, t
HPC
.
4. V
IH
VCC – 0.2 V, 0 V VIL 0.2 V.