The HD155111F was developed for PCN (DCS1800) cellular systems, and integrates most of the functions
of a transceiver. The HD155111F incorporates the bias circuit for a RF LNA, a 1st mixer, 1st-IF amplifier,
2nd mixer, AGC amplifier and an IQ quadrature demodulator for the receiver, and an IQ quadrature
modulator and offset PLL for the transmitter. Also, on chip are the dividers for the 1st & 2nd local
oscillator signals and 90˚ phase splitter. Moreover the HD155111F includes control circuits to implement
power saving modes. These functions can operate down to 2.7 V and are housed in a 48-pin LQFP SMD
package.
Hence the HD155111F can form a small size transceiver handset for PCN by adding a PLL frequency
synthesizer IC, a power amplifier and some external components. See page 7 “Configuration”.
The HD155111F is fabricated using a 0.6 µm double-polysilicon Bi-CMOS process.
The HD155111F is housed in a 48-pin LQFP SMD package to which is suitable for applications where
space is limited. “Pin Functions” shows the arrangement and roles assigned for each pin of the
HD155111F.
MIX1IN
MIX1INB
GNDMIX1
VCCMIX1
RFLOIN
MIX1OUTB
MIX1OUT
VCCIF
GNDIF
IFIN
IFINB
MIX2O
373839404142434445464748
POONRX1
1
36
MIX2OB
POONRX2
RFOUT
VCCLNA
GNDLNA
RFIN
POONTX
VCCPLL
GNDPLL
VCOIN
VCCCOMP
PLLOUT
2
3
4
5
6
7
8
9
10
11
12
QINB
ICURAD
QIN
IINB
181716151413
IIN
MODB
(Top View)
MOD
VCCIQ
IFLO
GNDIQ
35
34
33
32
31
30
29
28
27
26
25
242322212019
IFVCOI
IFVCOO
GNDAGC
VCCAGC
AGCOUT
AGCOUTB
VCCDIV
GNDDIV
VCONT
IOUT
IOUTB
QOUT
QOUTB
HD155111F
Pin Functions
Pin
No.Symbol
1POONRX1Input PO wer ON for RX1 If ‘H’, LNA and MIX1 are active.
2POONRX2Input PO wer ON for RX2 LNA and MIX1 don’t care.
3RFOUTOutput RF signal OUT putOpen collector type output of LNA.
4VCCLNAVcc VCC of LNA blockPower supply of LNA
5GNDLNAGnd GND of LNA blockGround of LNA
6RFINInput RF signal IN putInput of LNA.
7POONTXInput PO wer ON for TX If ‘H’, the blocks for transmitter are active.
8VCCPLLVcc VCC of O PLL blockPower supply for offset PLL except phase
9GNDPLLGnd GND of O PLL blockGround of offset PLL
10VCOINInput VCO signal IN putInput of Tx. VCO signal
11VCCCOMPVcc VCC of phase
12PLLOUTOutputO PLL OUT putCurrent output to control and modulate Tx. VCO
13ICURADInput I CUR rent AD justThis pin should be connected an external R to
14QINBInput Q signal IN put B arQ negative signal input of IQ quadrature modulator
15QINInput Q signal IN putQ positive signal input of IQ quadrature modulator
16IINBInput I signal IN put B arI negative signal input of IQ quadrature modulator
17IINInput I signal IN putI positive signal input of IQ quadrature modulator
18MODBOutput MOD ulator output B arNegative output of IQ quadrature modulator
19MODOutput MOD ulator outputPositive output of IQ quadrature modulator
20VCCIQVcc VCC of IQ blockPower supply of IQ block
21IFLOInput/
22GNDIQGnd GND of IQ blockGround of IQ block
23IFVCOOOutput IFVCO O utputEmitter of IFVCO transistor
24IFVCOIInput IFVCO I nputBase of IFVCO transistor
Input/
OutputMeaning of symbolFunction
Other receiver blocks don’t care.
If ‘H’, Other receiver blocks are active.
The collector of LNA transistor.
The base of LNA transistor
The reciver blocks don’t care.
comparator
Power supply for just phase comparator of offset
Output
COMP arator
IF LO cal signal
input/output
PLL
This pin should be connected external loop filter.
determine charge pump current of phase
comparator
IF local signal input to be fed to divider
Pin Function (cont)
HD155111F
Pin
No.Symbol
25QOUTBOutput Q signal OUT put B arQ negative signal output of IQ quadrature
26QOUTOutput Q signal OUT putQ positive signal output of IQ quadrature
27IOUTBOutput I signal OUT put B arI negative signal output of IQ quadrature
28IOUTOutput I signal OUT putI positive signal output of IQ quadrature
29VCONTInput V oltage of AGC
30GNDDIVGnd GND of DIV ider blockGround of divider to make IF local signals
31VCCDIVVcc VCC of DIV ider blockPower supply of divider to make IF local signals
32AGCOUTBOutput AGC OUT put B arAGC negative signal output to be fed to IQ
33AGCOUTOutput AGC OUT putAGC positive signal output to be fed to IQ
34VCCAGCVcc VCC of AGC blockPower supply of AGC
35GNDAGCGnd GND of AGC blockGround of AGC
36MIX2OBOutput MIX2 O utput B ar2nd mixer (MIX2) negative signal output to be fed
37MIX2OOutput MIX2 O utput2nd mixer (MIX2) positive signal output to be fed to
38IFINBInput1st IF signal IN put B arIFAMP negative signal input for 1st IF signal
39IFINInput1st IF signal IN putIFAMP positive signal input for 1st IF signal
40GNDIFGnd GND of IF MIX2 blockGround of IFAMP and 2nd mixer (MIX2)
41VCCIFVcc VCC of IF MIX2 blockPower supply of IFAMP and 2nd mixer (MIX2)
42MIX1OUTOutput MIX1 O utput1st mixer (MIX1) positive signal output
43MIX1OUTBOutput MIX1 O utput B ar1st mixer (MIX1) negative signal output
44RFLOINInput RF LO cal signal IN putRF 1st local signal input to be fed to 1st mixer
45VCCMIX1Vcc VCC of MIX1 blockPower supply of 1st mixer (MIX1)
46GNDMIX1Gnd GND of MIX1 blockGround of 1st mixer (MIX1)
47MIX1INBInput MIX1 I nput B ar1st mixer (MIX1) negative signal input
48MIX1INInput MIX1 I nput1st mixer (MIX1) positive signal input
Input/
OutputMeaning of symbolFunction
demodulator
demodulator
demodulator
demodulator
The DC voltage input to control the power gain of
CONT rol
AGC
quadrature demodulator
quadrature demodulator
to AGC
AGC
(MIX1) and the down converter of offset PLL
HD155111F
Block Diagram
225 MHz
MIX2OB
GNDAGC
36
45 MHz
MIX2O
IFINB
IFIN
GNDIF
Vref
VCCIF
Vref
MIX1OUT
MIX1OUTB
Rx. 1617 MHz
Tx. 1612 MHz
RFLOIN
VCCMIX1
GNDMIX1
35
)
Mix2
(
(IF)
Vref
*2
(Mix1)
45 MHz
VCCAGC
AGOUT
34
1617 MHz
AGCOUTB
33
32
45 MHz
)
AGC
Vref
(
Bias generator
*2
VCCDIV
GNDDIV
31
Linearizer
÷2÷2
÷3
Vref
1612 MHz
30
Vref
÷2
(90 deg)
)
Div, Tx
(
÷2(90 deg)
VCONT
IOUT 0 to 100 kHz
29
28
)
Div, Rx
(
÷2, ÷12
÷2
(90 deg)
)
Vref
Demod
(
135 MHz
Vref
135 MHz
100 kHz
100 kHz
to
to
QOUT 0
IOUTB 0
27
)
Mod
(
100 kHz
to
QOUTB 0
26
540 MHz
25
23
IFVCOI
IFVCOO
GNDIQ
IFLO
VCCIQ
MOD
MODB
Vtune
IFLO
To Synth.
0 to 100 kHz IIN
0 to 100 kHz IINB
0 to 100 kHz QIN
Notes: 1. H = Active, L = Off
0 to 100 kHz QINB
All biases are H active
When Bias generator is off, all circuits will be off.
2. When POONRX1 = ‘H’ and POONRX2 = ‘L’, bias generator will be off.
1842 MHz
1842 MHz
MIX1INB
484746454443424140393837
MIX1IN
1
*1
POONRX1
Vref
(LNA)
LNA
Bias
2
*1
POONRX2
Circuit
3
RFOUT
4
VCCLNA
GNDLNA
Vref
(PLL)
5
6
7
1747 MHz
8
RFIN
GNDPLL
VCCPLL
POONTX
9
Phase
10
VCOIN
detector
11
12
PLLOUT
VCCCOMP
ICURAD
1314151617181920212224
*1
Configuration
HD155111F
• Frequency Plan1
1805 to 1880 MHz
RF
filter
TCXO
13 MHz
LPF
HPA Module
• Frequency Plan2
1805 to 1880 MHz
RF
filter
TCXO
13 MHz
LPF
HPA Module
LNA
bias
circuit
Rx. 1580 to 1655 MHz
Tx. 1575 to 1650 MHz
HD155017T
LNA
bias
circuit
1580 to 1655 MHz
HD155017T
RF
SAW
filter
Dual
synth.
RF
SAW
filter
Dual
synth.
buffer
buffer
225 MHz
IF
SAW
filter
RF VCO
PLL2PLL1
1710 to 1785 MHz
225 MHz
IF
SAW
filter
RF VCO
PLL2PLL1
1710 to 1785 MHz
270 MHz
IFVCO
540 MHz
Loop
filter
Rx. 270 MHz
IFVCO
Rx. 540 MHz
Tx. 520 MHz
Loop
filter
÷2
135 MHz
Phase
Detector
÷2
130 MHz
Phase
Detector
45 MHz
LC
filter
135 MHz
45 MHz
LC
filter
130 MHz
AGC
HD155111F
÷6
AGC
HD155111F
÷6
Tx. 260 MHz
45 MHz
90 deg
Shift
135 MHz
45 MHz
90 deg
Shift
130 MHz
I & Q
I & Q
Demo.
90 deg
Shift
÷2
÷2
I & Q
Mod
I & Q
Demo.
90 deg
Shift
÷2
÷2
Mod
I
Q
B.B.
Block
I
Q
I
Q
B.B.
Block
I
Q
HD155111F
A GSM Application Example
225 MHz
Rx. 1617 MHz
Tx. 1612 MHz
1842 MHz
45 MHz
MIX2O
38
IFINB
3937
IFIN
40
GNDIF
41
VCCIF
42
MIX1OUT
MIX1OUTB
44
RFLOIN
VCCMIX1
GNDMIX1
MIX1INB
4847464543
MIX1IN
1842 MHz
MIX2OB
GNDAGC
36
Vref
Vref
Vref
Vref
LNA
1
POONRX2
POONRX1
DAC
35
(Mix2)
(IF)
(Mix1)
(LNA)
Bias
2
DAC
10 bit
VCCAGC
34
1617 MHz
Circuit
3
RFOUT
10 bit
Base Band
45 MHz
AGOUT
33
4
VCCLNA
System
Controller
&
Base Band
Interface
ADC
12 bit
AGCOUTB
VCCDIV
32
Linearizer
45 MHz
Vref
(AGC)
*2
Bias generator
5
RFIN
GNDLNA
1842 MHz
Physical
Layer
Processor
Processing
DAC
GNDDIV
31
÷2÷2
÷3
÷2
Vref
1612 MHz
Vref
(PLL)
6
POONTX
ADC
10 bit
VCONT
30
Vref
(Div, Rx)
÷2
(90 deg)
(Div, Tx)
÷2(90 deg)
7
VCCPLL
12 bit
IOUT
29
÷2, ÷12
(90 deg)
135 MHz
1747 MHz
8
GNDPLL
DAC
10 bit
IOUTB
28
Vref
(Demod)
135 MHz
Vref
(Mod)
9
VCOIN
PA
QOUT
27
Phase
detector
10
VCCCOMP
Tx.VCO
ALC
13 MHz
QOUTB
26
540 MHz
11
PLLOUT
1747 MHz
Dual PLL synth.
VHF(IF)
PLL Synth.
UHF(RF)
PLL Synth.
25
12
IFVCOI
IFVCOO
GNDIQ
IFLO
VCCIQ
MOD
MODB
IIN
IINB
QIN
QINB
ICURAD
131415161718192021222324
HD155111F
Functional Operation
The HD155111F has been designed from system stand point and incorporated a large number of the circuit
blocks necessary in the design of a digital cellular handset.
Receiver Operation
The HD155111F incorporates a LNA bias circuit for an external RF transistor, whose NF and power gain
can be better selected.
This circuit amplifies the RF signal after selection by the antenna filter before the signal enters the first
mixer section. The RF signal is combined with a low side local oscillator (LO) signal to generate a wanted
first IF signal in the 130 to 300 MHz range. The 1st mixer circuit uses a double-balanced Gilbert cell
architecture, which has open collector differential outputs. If, at 225 MHz, a 800 Ω LC load is connected
to the mixer’s outputs then a SSB NF of 10 dB with a gain of 8.0 dB is realizable. The corresponding input
compression point is –13 dBm, which allows the device to be used within a PCN system.
A filter is used after the 1st mixer to provide image rejection and the conditioned signal is then passed
through an intermediate amplifier, before being down converted to a second IF in the range of 26 to 60
MHz.
The second mixer can generate a 45 MHz 2nd IF, if a 270 MHz 2nd LO signal is used. The 2nd LO is
obtained by dividing the IFLO signal by 2. The 2nd mixer also uses the Gilbert cell architecture, but with
internal resistive differential outputs of 300 Ω. IF amplifier and second mixer has a SSB NF of 5.6 dB, a
power gain of 12 dB and an input compression point of –25 dBm. In order to improve the blocking
characteristics of the device an external LC resonator across the differential outputs of the second mixer is
recommended.
The signal is then passed to the AGC circuit, which has a dynamic range of more than 80 dB (–42 dB to
+55 dB Typ) and is controlled by a DC voltage, which is generated by the microprocessor. This DC
control range is from 0.15 V to 2.3 V. The AGC, which is designed for the PCN system, provides a
linearity of ±1.0 dB in any 20 dB window. The outputs of the AGC are 2 kΩ differential and are connected
the external supply via inductors.
The signal is then down converted by a demodulator to I and Q. Internal divider circuits convert the IFLO
signal to the same frequency as the 2nd IF before passing this local signal through a phase splitter / shifter
in order to generate the in phase and quadrature IQ components. The phase accuracy of the IQ
demodulator is < ±1° and the amplitude mismatch is < ±0.5 dB. In order to accommodate different
baseband interfaces the HD155111F IQ differential outputs have a voltage swing of 2.4 Vp-p and a DC
offset of < 60 mV Max. Within each output stage a 2nd order Butterworth filter (fc = 210 kHz), is used to
improve the blocking performance of the device.
In order to allow flexibility in circuit implementation the HD155111F can configured to use either a singleended or balanced external circuitry and components.
HD155111F
LNA
Vref
LNA
bias
circuit
Pinput
Poutput
RFOUT
3
VCCLNA
4Vcc
GNDLNA
5
RFIN
6
Figure 1 LNA Bias Circuit
Transmitter Operation
The transmitter chain converts differential IQ baseband signals to a suitable format for transmission by a
power amplifier.
The common mode DC voltage range of the modulator inputs is 0.8 to 1.2 V and they have 2.4 Vp-p Max
differential swing. The modulator circuit uses double-balanced mixers for the I and Q paths. The LO
signals are generated by dividing the IFLO signal by 2 and then passing them through a phase splitter /
shifter. The IF signals generated are then summed and produce a single modulated IF signal which is
amplified and fed into the offset PLL block. Carrier suppression due to the mixer circuit is better than 31
dBc. However, if the common mode DC voltage of the I and Q inputs is adjusted, carrier suppression can
be improved better than 40 dBc easily. In addition, upper side-band suppression is better than 35 dBc.
Within the offset PLL block there is a down converter, a phase comparator and a VCO driver. The down
converter mixes the 1st LO signal and the TX VCO to create a reference LO signal for use in the offset
PLL circuit. The phase comparator and the VCO driver generate an error current, which is proportional to
the phase difference between the reference IF and the modulated IF signals. This current is used in a 2nd
order loop filter to generate a voltage, which in turn modulates the TX VCO. In order to optimize the PLL
loop gain, the error current value can be modified by changing the value of an external resistor - ICURAD.
In order to accommodate a range of TX VCO, the offset PLL circuit has been designed to operate with a
supply voltage of up to 5.25 V.
Operating Modes
The HD155111F has the necessary control circuitry to implement the necessary states within the PCN
system. Also provided is a power save mode which reduces the current consumption of the device by
powering down unnecessary function blocks. Three pins are assigned for mode control, POONRX1,
POONRX2 and POONTX. Table 1 shows the relationship between the pins and the required operating
mode. Control of these pins are by the system controller.
As per PCN requirements the TX and RX sections are not on at the same time. For the receiver there is a
calibration mode for which the LNA bias circuit and 1st mixer are switched off. During this period the
gain of the AGC can be adjusted. Also the DC offsets of the IQ demodulator are measured and
subsequently canceled.
In order to change between the RX and TX modes a state called “warm-up” is used to ensure that the LO
HD155111F
Power saving is implemented through use of the idle mode. All function blocks of the HD155111F are
switched off until such time as the system controller commends the device to power up again.
POONTX (pin 7)LLLHDon’t care
HD155111FLNA biasONOFFOFFOFFOFF
circuit status1st mixerONOFFOFFOFFOFF
IF AMPONONOFFOFFOFF
2nd mixerONONOFFOFFOFF
AGCONONOFFOFFOFF
IO demodulatorONONOFFOFFOFF
Divider (Rx.)ONONOFFOFFOFF
Divider (Tx.)OFFOFFOFFONOFF
IO modulatorOFFOFFOFFONOFF
Offset PLLOFFOFFOFFONOFF
RF 1st local bufferONONONONOFF
IF local bufferONONONONOFF
IFVCOONONONONOFF
Total current42.5 mA Typ32 mA Typ10.5 mA Typ38 mA Typ1 µA Typ
The slots of
PCN system
Operating modes
of the HD155111F
POONRX1(pin 1)
POONRX2(pin 2)
POONTX (pin 7)
Power Amplifier ON
UHF PLL synth. ON
UHF PLL synth. load
VCO control voltage
of UHF PLL synth.
4.615ms
7012345670123456701
RxRxTxTx
CalCalCalCal
RxRxRxRx
TxTx
Lo-ONLo-ON
MonMon
LoON
LoON
4.615ms
LoON
Lo-
ON
Idle(PS) mode don't care
PS
HD155111F
IFVCO Operation
The HD155111F incorporates an IFVCO circuit. The IFVCO circuit consists of an IFVCO transistor and a
bias circuit for it, whose current are 2.0 mA and 0.5 mA respectively. If an internal IFVCO is used, treat
pin 23 (IFVCOO), pin 24 (IFVCOI) and pin 21 (IFLO) as shown figure 3-(a).
Using an external IFVCO, pin 23 (IFVCOO) and pin 24 (IFVCOI) cannot be connected any pattern and
component, and any component to feed direct current must be also removed from pin 21 (IFLO).
If pin 23 (IFVCOO), pin 24 (IFVCOI) and pin 21 (IFLO) are treated as shown figure 3-(b), current
consumption will decrease 2.0 mA.
Moreover, there is the other external IFVCO solution using only an IFVCO bias circuit as shown figure 3(c). The IFVCO bias circuit has an internal power save function. Therefore, if figure 3-(c) is adopted, an
internal power save function can be used as well as figure 3-(a).
IFVCO
bias circuit
IFVCO
bias circuit
IFVCOI
HD155111F
IFVCOI
Vtune
IFLO
HD155111F
PLL
synth.
Vtune
IFLO
PLL
synth.
23
2124
IFLO
IFVCOO
External
IFVCO
23
2124
IFLO
IFVCOO
Vcc
(a) using an internal IFVCO(b) using an external IFVCO
23
2124
IFLO
IFVCOO
Vcc
(c) using only an IFVCO bias circuit
Figure 3 IFVCO Circuits
IFVCO
bias circuit
HD155111F
IFVCOI
Vtune
IFLO
PLL
synth.
HD155111F
Absolute Maximum Ratings
Any stresses in excess of the absolute maximum ratings can cause permanent damage to the HD155101BF.
ItemSymbolRatingUnit
Power supply voltage (VCC)VCC–0.3 to +4.0V
Power supply voltage (VCCCOMP)VCCCOMP–0.3 to +5.5V
Pin voltageV
Maximum power dissipationP
Operating temperatureTopr–20 to +75°C
Storage temperatureTstg–55 to +125°C
T
T
–0.3 to VCC + 0.3 (6.0 Max)V
400mW
HD155111F
Oco
C
C
Electrical Characteristics (Ta = 25°C)
Specifications
ItemSymbolMinTypMaxUnitTest Conditions
Power supply voltage (1)V
Power supply voltage (2)V
Power supply current (Rx.)I
Power supply current (Tx.)I
Power supply current
CC
CCCOMP
CC(Rx.)
CC(Tx.)
I
CC(Lo-ON)
(Lo-ON)
Power saving mode supply
I
CC(PS)
current
Power up time (Rx.)t up
Power up time (Tx.)t up
Power on control voltage
range (Rx1, Rx2, Tx)
Vthon
Vthon
Vthon
Power off control voltage
range (RX1, Rx2, Tx)
Vthoff
Vthoff
Vthoff
I/Q common-mode output
voltage
I/Q differential output swingV
I/Q output offset voltageV
I/Q common-mode input
voltage
I/Q differential input swingV
V
I
V
QOcom
IOsw
V
QOsw
IOoffset
V
QOoffset
V
IIcom
V
QIcom
IIsw
V
QIsw
Note: ( ) : These data are actual spread, not guaranteed.
2.73.03.6V4, 8, 20, 31,
2.73.05.25V11
—42.560.0mAVCC = 3.0V
V
= 3.0V
CCCOMP
—38.055.0mAVCC = 3.0V
V
= 3.0V
CCCOMP
—10.515.0mAVCC = 3.0V
V
= 3.0V
CCCOMP
—1.010.0µAVCC = 3.0V
V
= 3.0V
CCCOMP
—1.5(5.0)µsecVCC = 3.0V
(Rx.)
—0.2(0.5)µsecVCC = 3.0V
(Tx.)
2.3——VVCC = 3.0V1
RX1
RX2
TX
——0.8VVCC = 3.0V1
RX1
RX2
TX
/
1.11.31.5VVCC = 3.0V25, 26
m
/
2.43.0—Vp-pVCC = 3.0V
/
–600+60mVVCC = 3.0V
/
(0.8)1.0(1.2)VVCC = 3.0V14, 15
/
—2.0(2.4)Vp-pVCC = 3.0V
V
CCCOMP
V
CCCOMP
V
IOUT
V
QOUT
V
IOUTD
V
QOUTDC
V
IIN
V
QIN
– V
– V
– V
= 3.0V
= 3.0V
– V
– V
– V
IINB
QINB
IOUTB
QOUTB
IOUTBD
QOUTBDC
Applicable
pinsNote
34, 41, 45
4, 8, 20, 31,
34, 41, 45, 11
4, 8, 20, 31,
34, 41, 45, 11
4, 8, 20, 31,
34, 41, 45, 11
4, 8, 20, 31,
34, 41, 45, 11
from PS
mode
from PS
mode
2
7
2
7
27, 28
25, 26
27, 28
25, 26
27, 28
16, 17
14, 15
16, 17
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