HIT HAT2064R Datasheet
Silicon N Channel Power MOS FET
Features
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
R
= 5.0 mΩ typ (at VGS = 10V)
DS(on)
Outline
HAT2064R
Power Switching
ADE-208-930G (Z)
8th. Edition
May 2000
SOP-8
4
G
56 7 8
D
D
DD
SSS
1
23
5
6
7
8
2
1
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
4
3
HAT2064R
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch
Channel to Ambient Thermal
DSS
GSS
D
D(pulse)
DR
θch-a
Note1
Note2
Note2
Impedance
Channel temperature Tch 150 °C
Storage temperature Tstg – 55 to + 150 °C
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
30 V
± 20 V
16 A
128 A
16 A
2.5 W
50 °C/W
2
HAT2064R
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
30——V I
voltage
Gate to source breakdown
V
(BR)GSS
± 20 — — V IG = ±100 µA, VDS = 0
voltage
Gate to source leak current I
Zero gate voltege drain
GSS
I
DSS
——± 10 µAV
——1 µAV
current
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
GS(off)
DS(on)
DS(on)
1.0 — 2.5 V VDS = 10 V, I D = 1 mA
— 5.0 6.3 mΩ ID = 8 A, VGS = 10 V
— 7.0 10 mΩ ID = 8 A, VGS = 4.5 V
Forward transfer admittance |yfs|1830—SI
Input capacitance Ciss — 2200 — pF VDS = 10 V
Output capacitance Coss — 600 — pF VGS = 0
Reverse transfer capacitance Crss — 330 — pF f = 1 MHz
Total gate charge Qg — 40 — nc VDD = 10 V
Gate to source charge Qgs — 6 — nc VGS = 10 V
Gate to drain charge Qgd — 8 — nc ID = 16 A
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward
V
d(on)
r
d(off)
f
DF
— 20 — ns VGS = 10 V, ID = 8 A
— 35 — ns VDD ≈ 10 V
— 60 — ns RL = 1.25 Ω
— 16 — ns Rg = 4.7 Ω
— 0.9 1.17 V IF = 16 A, VGS = 0
voltage
Body–drain diode reverse
t
rr
— 50 — ns IF = 16 A, VGS = 0
recovery time
Note: 3. Pulse test
= 10 mA, VGS = 0
D
= ±16 V, VDS = 0
GS
= 30 V, VGS = 0
DS
= 8 A, VDS = 10 V
D
diF/ dt = 50 A/ µs
Note3
Note3
Note3
Note3
3
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