HIT HAT2054M Datasheet
HAT2054M
Silicon N Channel Power MOS FET
Power Switching
Features
• Low on-resistance
• Low drive current
• High density mounting
• 4.5V gate drive device can be driven from 5V source
Outline
ADE-208-756B(Z)
Preliminary
3rd. Edition
December 1998
TSOP–6
3
G
12 5 6
DSD
DD
4
4
5
6
1
4 Source
3 Gate
1, 2, 5, 6 Drain
3
2
HAT2054M
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current ID*
Drain peak current I
Body-drain diode reverse drain current IDR*
Channel dissipation Pch
DSS
GSS
D(pulse)
Pch
2
*
2
(pulse)
(continuous)
1
2
*
3
*
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the alumina ceramic board (50 x 50 x 0.7 mm), PW≤ 5s,Ta=25°C
3. When using the alumina ceramic board (50 x 50 x 0.7 mm) ,Ta=25°C
Electrical Characteristics (Ta = 25°C)
30 V
±20 V
6.3 A
25.2 A
6.3 A
2.0 W
1.05 W
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
(BR)DSS
GSS
DSS
GS(off)
DS(on)
DS(on)
30——V I
——±0.1 µAVGS = ±20V, VDS = 0
——1 µAVDS = 30 V, VGS = 0
1.0 — 2.5 V VDS = 10V, I D = 1mA
—2631mΩ ID = 3A, VGS = 10V *
—4052mΩ ID = 3A, VGS = 4.5V *
Forward transfer admittance |yfs|47—SI
= 10mA, VGS = 0
D
= 3A, VDS = 10V *
D
Input capacitance Ciss — 620 — pF VDS = 10V
Output capacitance Coss — 170 — pF VGS = 0
Reverse transfer capacitance Crss — 110 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse
recovery time
t
d(on)
r
d(off)
f
DF
rr
— 13 — ns VGS = 10V, ID = 3A
— 90 — ns RL = 3.3Ω
—50—ns
—40—ns
— 0.95 — V IF = 6.3A, VGS = 0 *
— (50) — ns IF = 6.3A, VGS = 0
diF/ dt =20A/µs
Note: 1. Pulse test
1
1
1
1
2
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