HIT HAT2052T-D Datasheet

HAT2052T

Silicon N Channel Power MOS FET

High Speed Power Switching

ADE-208-724C (Z)

4th. Edition

February 1999

Features

• Low on-resistance

• Capable of 2.5 V gate drive

• Low drive current

• High density mounting

Outline

TSSOP–8

1, 8 Drain
2, 3, 6, 7 Source
4, 5 Gate

1

2

3

4

8

7

6

5

G

D

S
2

4

1

S
3

G

D

S S

5

8

6

7

MOS1

MOS2

HAT2052T

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V

DSS

28 V

Gate to source voltage V

GSS

± 12 V

Drain current I

D

5.0 A

Drain peak current I

D(pulse)

Note1

40 A

Body-drain diode reverse drain current I

DR

5.0 A

Channel dissipation Pch

Note2

1.0 W

Channel dissipation Pch

Note3

1.5 W
Channel temperature Tch 150 °C
Storage temperature Tstg – 55 to + 150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V

(BR)DSS

28——V I

D

= 10 mA, VGS = 0

Gate to source leak current I

GSS

——± 0.1 µAVGS = ± 12 V, VDS = 0

Zero gate voltege drain current I

DSS

——1 µAVDS = 28 V, VGS = 0

Gate to source cutoff voltage V

GS(off)

0.4 — 1.4 V VDS = 10 V, I D = 1 mA

Static drain to source on state R

DS(on)

— 0.027 0.034 Ω ID = 3 A, VGS = 4 V

Note4

resistance R

DS(on)

— 0.037 0.044 Ω ID = 3 A, VGS = 2.5 V

Note4

Forward transfer admittance |yfs| 7 11 — S ID = 3 A, VDS = 10 V

Note4

Input capacitance Ciss — 510 — pF VDS = 10 V
Output capacitance Coss — 190 — pF VGS = 0
Reverse transfer capacitance Crss — 140 — pF f = 1MHz
Total gate charge Qg — 8.5 — nc VDD = 10 V
Gate to source charge Qgs — 4.5 — nc VGS = 4 V
Gate to drain charge Qgd — 4 — nc ID = 5 A
Turn-on delay time t

d(on)

— 14 — ns VGS = 4 V, ID = 3 A

Rise time t

r

— 120 — ns VDD ≅ 10 V

Turn-off delay time t

d(off)

—85—ns

Fall time t

f

— 120 — ns

Body–drain diode forward voltage V

DF

— 0.85 1.1 V IF = 5.0 A, VGS = 0

Note4

Body–drain diode reverse
recovery time

t

rr

— 40 — ns IF = 5.0 A, VGS = 0

diF/ dt = 20 A/µs

Note: 4. Pulse test

HAT2052T

3

Main Characteristics

0

50 100 150 200

100

30
10

3
1

0.3

0.1

0.03

0.01

0.1

0.3 1 3 10 30 100

10

8

6

4

2

0

12345

10

8

6

4

2

0

1234

5

2.0

1.5

1.0

0.5
Ta = 25 °C

1 shot Pulse

10 µs

100 µs

1 ms

PW = 10 ms

10V

4 V

V = 1.0 V

GS

1.5 V

Tc = 75°C

25°C

–25°C

Channel Dissipation Pch (W)

Ambient Temperature Ta (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Maximum Safe Operation Area

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Typical Output Characteristics

Gate to Source Voltage V (V)

GS

Typical Transfer Characteristics

Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)

Pulse Test

Operation in
this area is
limited by R

DS(on)

V = 10 V
Pulse Test

DS

Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s

2 Drive Operation

1 Drive Operation

Note 5

DC Operation (PW < 10 s)

Drain Current I (A)

D