HIT HAT2051T-D Datasheet
HAT2051T
Silicon N Channel Power MOS FET
High Speed Power Switching
ADE-208-661A (Z)
2nd. Edition
February 1999
Features
• Low on-resistance
• Capable of 2.5 V gate drive
• Low drive current
• High density mounting
Outline
TSSOP–8
1, 8 Drain
2, 3, 6, 7 Source
4, 5 Gate
1
2
3
4
8
7
6
5
G
D
S
2
4
1
S
3
G
D
S S
5
8
6
7
MOS1
MOS2
HAT2051T
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
30 V
Gate to source voltage V
GSS
± 10 V
Drain current I
D
1A
Drain peak current I
D(pulse)
Note1
4A
Body-drain diode reverse drain current I
DR
1A
Channel dissipation Pch
Note2
0.8 W
Channel dissipation Pch
Note3
1.2 W
Channel temperature Tch 150 °C
Storage temperature Tstg – 55 to + 150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR)DSS
30——V I
D
= 10 mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
± 10 — — V IG = ± 100 µA, VDS = 0
Gate to source leak current I
GSS
——± 10 µAVGS = ± 8 V, VDS = 0
Zero gate voltege drain current I
DSS
——1 µAVDS = 30 V, VGS = 0
Gate to source cutoff voltage V
GS(off)
0.75 — 1.75 V VDS = 10 V, I D = 1 mA
Static drain to source on state R
DS(on)
— 0.14 0.2 Ω ID = 0.5 A, VGS = 10 V
Note4
resistance R
DS(on)
— 0.2 0.3 Ω ID = 0.5 A, VGS = 4 V
Note4
Forward transfer admittance |yfs| 1.4 2.2 — S ID = 0.5 A, VDS = 10 V
Note4
Input capacitance Ciss — 155 — pF VDS = 10 V
Output capacitance Coss — 75 — pF VGS = 0
Reverse transfer capacitance Crss — 35 — pF f = 1MHz
Turn-on delay time t
d(on)
— 12 — ns VGS = 4 V, ID = 0.5 A
Rise time t
r
— 30 — ns VDD ≅ 10 V
Turn-off delay time t
d(off)
—35—ns
Fall time t
f
—25—ns
Body–drain diode forward voltage V
DF
— 0.81 1.1 V IF = 1 A, VGS = 0
Note4
Body–drain diode reverse
recovery time
t
rr
— 35 — ns IF = 1 A, VGS = 0
diF/ dt = 20 A/µs
Note: 4. Pulse test
HAT2051T
3
Main Characteristics
0
50 100 150 200
10
3
1
0.3
0.1
0.03
0.01
0.003
0.001
0.1
0.3 1 3 10 30 100
5
4
3
2
1
0
246810
5
4
3
2
1
0
1234
5
2.0
1.5
1.0
0.5
10 µs
100 µs
1 ms
PW = 10 ms
10V
4 V
5 V
Pulse Test
2.5 V
Tc = 75°C
25°C
–25°C
V = 10 V
DS
Pulse Test
Channel Dissipation Pch (W)
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
2 Drive Operation
1 Drive Operation
Operation in
this area is
limited by R
DS(on)
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Ta = 25°C
1 shot Pulse
1 Drive Operation
DC Operation (PW < 10 s)
Note5
V = 2.0 V
GS
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