HIT HAT2049T Datasheet

Silicon N Channel Power MOS FET

Features

• Low on-resistance

• Capable of 2.5 V gate drive

• Low drive current

• High density mounting

Outline

HAT2049T

High Speed Power Switching

ADE-208-723 (Z)

1st. Edition

February 1999

TSSOP–8

4
G

1
D

S
2

8

5

DD

S

S6S

3

5

6

7

8

4

3

2

1

1, 5, 8 Drain
2, 3, 6, 7 Source

7

4 Gate

HAT2049T

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note1

Note2

Channel temperature Tch 150 °C
Storage temperature Tstg – 55 to + 150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

(BR)DSS

(BR)GSS

GSS

DSS

GS(off)

DS(on)

DS(on)

Forward transfer admittance |yfs|1320—S ID = 4 A, VDS = 10 V
Input capacitance Ciss — 1430 — pF VDS = 10 V
Output capacitance Coss — 410 — pF VGS = 0
Reverse transfer capacitance Crss — 265 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse

t

d(on)

r

d(off)

f

DF

rr

recovery time
Note: 3. Pulse test

30——V I
± 12 — — V IG = ± 100 µA, VDS = 0
——± 0.1 µAVGS = ± 12 V, VDS = 0
——1 µAVDS = 30 V, VGS = 0

0.4 — 1.4 V VDS = 10 V, I D = 1 mA
— 0.013 0.017 Ω ID = 4 A, VGS = 4 V
— 0.017 0.025 Ω ID = 4 A, VGS = 2.5 V

— 23 — ns VGS = 4 V, ID = 4 A
— 165 — ns VDD ≅ 10 V
— 215 — ns
— 185 — ns
— 0.83 1.08 V IF = 8 A , VGS = 0
— 30 — ns IF = 8 A, VGS = 0

30 V
± 12 V
8A
64 A
8A

1.3 W

= 10 mA, VGS = 0

D

Note3

diF/ dt = 20 A/µs

Note3

Note3

Note3

2

Main Characteristics

HAT2049T

Power vs. Temperature Derating

2.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s

1.5

1.0

0.5

Channel Dissipation Pch (W)

0

50 100 150 200

Ambient Temperature Ta (°C)

Typical Output Characteristics

20

2 V

16

10 V

4 V

D

12

Pulse Test

100

Maximum Safe Operation Area

30
10

D

3

DC Operation (PW < 10 s)

1

Operation in

0.3
this area is

0.1

0.03

0.01

limited by R

DS(on)

Ta = 25 °C
1 shot Pulse

0.1

0.3 1 3 10 30 100

Drain Current I (A)

Drain to Source Voltage V (V)
Note 4 :

When using the glass epoxy board
(FR4 40x40x1.6 mm)

Typical Transfer Characteristics

20

16

D

12

10 µs

100 µs

1 ms

PW = 10 ms

Note 4

Tc = –25 °C

25 °C

75 °C

DS

8

Drain Current I (A)

4

0

12345

V = 1.5 V

Drain to Source Voltage V (V)

GS

DS

8

Drain Current I (A)

4

0

1234

Gate to Source Voltage V (V)

V = 10 V

DS

Pulse Test

GS

5

3