HIT HAT2045T-D Datasheet
HAT2045T
Silicon N Channel Power MOS FET
High Speed Power Switching
Target Specification
5th. Edition
February 1999
Features
• Low on-resistance
• Capable of 2.5 V gate drive
• Low drive current
• High density mounting
Outline
TSSOP–8
1, 8
D
2, 3, 6, 7 So
u
4, 5
G
1
2
3
4
8
7
6
5
G
D
S
2
4
1
S
3
G
D
S S
5
8
6
7
MOS1
MOS2
HAT2045T
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
28 V
Gate to source voltage V
GSS
±12 V
Drain current I
D
6.0 A
Drain peak current I
D(pulse)
Note1
48 A
Body-drain diode reverse drain current I
DR
6.0 A
Channel dissipation Pch
Note2
1.0 W
Channel dissipation Pch
Note3
1.5 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
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