HIT HAT2040R Datasheet
Silicon N Channel Power MOS FET
Features
• Capable of 4 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
R
=6.2m typ
DS(on)
Outline
HAT2040R
Power Switching
ADE-208-565D (Z)
5th. Edition
February 1999
SOP–8
4
G
56 7 8
D
D
DD
SSS
1
23
5
6
7
8
2
1
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
4
3
HAT2040R
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
30 V
±20 V
15 A
120 A
15 A
2.5 W
2
HAT2040R
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
30——V I
voltage
Gate to source leak current I
Zero gate voltege drain
GSS
I
DSS
——±0.1 µAVGS = ±20V, VDS = 0
——1 µAVDS = 30 V, VGS = 0
current
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
GS(off)
DS(on)
DS(on)
1.0 — 2.5 V VDS = 10V, I D = 1mA
— 6.2 8.0 mΩ ID = 8A, VGS = 10V
— 9.0 13.0 mΩ ID = 8A, VGS = 4V
Forward transfer admittance |yfs|1830—SI
Input capacitance Ciss — 4400 — pF VDS = 10V
Output capacitance Coss — 950 — pF VGS = 0
Reverse transfer capacitance Crss — 400 — pF f = 1MHz
Total gate charge Qg — 90 — nc VDD = 10V
Gate to source charge Qgs — 15 — nc VGS = 10V
Gate to drain charge Qgd — 18 — nc ID = 15A
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward
V
d(on)
r
d(off)
f
DF
— 110 — ns VGS = 4V, ID = 8A
— 440 — ns VDD ≅ 10V
— 160 — ns
— 170 — ns
— 0.9 1.17 V IF = 15A, VGS = 0
voltage
Body–drain diode reverse
t
rr
— 55 — ns IF = 15A, VGS = 0
recovery time
Note: 3. Pulse test
= 10mA, VGS = 0
D
= 8A, VDS = 10V
D
diF/ dt =20A/µs
Note3
Note3
Note3
Note3
3
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