HIT HAT2039R-D Datasheet

HAT2039R

Silicon N Channel Power MOS FET

High Speed Power Switching

ADE-208-667C (Z)

4th. Edition

February 1999

Features

• Low on-resistance

• Capable of 2.5 V gate drive

• Low drive current

• High density mounting

Outline

SOP–8

1

2

3

4

5

6

7

8

G

DSD

G

DSD

MOS1

MOS2

1

2

78

4

5

6

3

1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain

HAT2039R

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V

DSS

30 V

Gate to source voltage V

GSS

± 12 V

Drain current I

D

8.0 A

Drain peak current I

D(pulse)

Note1

64 A

Body-drain diode reverse drain current I

DR

8.0 A

Channel dissipation Pch

Note2

2.0 W

Channel dissipation Pch

Note3

3.0 W
Channel temperature Tch 150 °C
Storage temperature Tstg – 55 to + 150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V

(BR)DSS

30——V I

D

= 10 mA, VGS = 0

Gate to source leak current I

GSS

——± 0.1 µAVGS = ± 12 V, VDS = 0

Zero gate voltege drain current I

DSS

——1 µAVDS = 30 V, VGS = 0

Gate to source cutoff voltage V

GS(off)

0.4 — 1.4 V VDS = 10 V, I D = 1 mA

Static drain to source on state R

DS(on)

— 0.017 0.022 Ω ID = 4 A, VGS = 4 V

Note4

resistance R

DS(on)

— 0.022 0.032 Ω ID = 4 A, VGS = 2.5 V

Note4

Forward transfer admittance |yfs|1320—S I

D

= 4 A, VDS = 10 V

Note4

Input capacitance Ciss — 1420 — pF VDS = 10 V
Output capacitance Coss — 410 — pF VGS = 0
Reverse transfer capacitance Crss — 260 — pF f = 1MHz
Total gate charge Qg — 20 — nc VDD = 10 V
Gate to source charge Qgs — 12 — nc VGS = 4 V
Gate to drain charge Qgd — 8 — nc ID = 8 A
Turn-on delay time t

d(on)

— 23 — ns VGS = 4 V, ID = 4 A

Rise time t

r

— 165 — ns VDD ≅ 10 V

Turn-off delay time t

d(off)

— 215 — ns

Fall time t

f

— 185 — ns

Body–drain diode forward voltage V

DF

— 0.85 1.1 V IF = 8.0 A, VGS = 0

Note4

Body–drain diode reverse
recovery time

t

rr

— 30 — ns IF = 8.0 A, VGS = 0

diF/ dt = 20 A/µs

Note: 4. Pulse test

HAT2039R

3

Main Characteristics

Channel Dissipation Pch (W)

Ambient Temperature Ta (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Maximum Safe Operation Area

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Typical Output Characteristics

Gate to Source Voltage V (V)

GS

Drain Current I (A)

D

Typical Transfer Characteristics

Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)

4.0

3.0

2.0

1.0

0

50 100 150 200

100

30
10

3
1

0.3

0.1

0.03

0.01

0.1

0.3 1 3 10 30 100

10 µs

1 ms

PW = 10 ms

50

40

30

20

10

0

246810

10 V

V = 1.5 V

GS

4 V

20

16

12

8

4

0

1234

5

Tc = –25 °C

75 °C

25 °C

2 Drive Operation

1 Drive Operation

Operation in
this area is
limited by R

DS(on)

Pulse Test

V = 10 V
Pulse Test

DS

Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s

Note 5

DC Operation (PW < 10 s)

Ta = 25 °C
1 shot Pulse
1 Drive Operation

100 µs

2.5 V

2 V