HIT HAT2038RJ, HAT2038R-D Datasheet
HAT2038R/HAT2038RJ
Silicon N Channel Power MOS FET
High Speed Power Switching
ADE-208-666C (Z)
4th. Edition
February 1999
Features
• For Automotive Application ( at Type Code “J “)
• Low on-resistance
• Capable of 4 V gate drive
• High density mounting
Outline
SOP–8
1
2
3
4
5
6
7
8
G
DSD
G
DSD
MOS1
MOS2
1
2
78
4
5
6
3
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
HAT2038R/HAT2038RJ
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
60 V
Gate to source voltage V
GSS
± 20 V
Drain current I
D
5A
Drain peak current I
D(pulse)
Note1
40 A
Body-drain diode reverse drain current I
DR
5A
Avalanche current HAT2038R I
AP
Note4
——
HAT2038RJ 5 A
Avalanche energy HAT2038R E
AR
Note4
——
HAT2038RJ 2.14 mJ
Channel dissipation Pch
Note2
2W
Channel dissipation Pch
Note3
3W
Channel temperature Tch 150 °C
Storage temperature Tstg – 55 to + 150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
4. Value at Tch=25°C, Rg≥50Ω
HAT2038R/HAT2038RJ
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR)DSS
60——V I
D
= 10 mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
± 20 — — V IG = ± 100 µA, VDS = 0
Gate to source leak current I
GSS
——± 10 µAVGS = ± 16 V, VDS = 0
Zero gate voltage HAT2038R I
DSS
——1 µAVDS = 60 V, VGS = 0
drain current HAT2038RJ I
DSS
— — 0.1 µA
Zero gate voltage HAT2038R I
DSS
———µAVDS = 48 V, VGS = 0
drain current HAT2038RJ I
DSS
——10µA Ta = 125°C
Gate to source cutoff voltage V
GS(off)
1.2 — 2.2 V VDS = 10 V, I D = 1 mA
Static drain to source on state R
DS(on)
— 0.043 0.058 Ω ID = 3 A, VGS = 10 V
Note5
resistance R
DS(on)
— 0.056 0.084 Ω ID = 3 A, VGS = 4 V
Note5
Forward transfer admittance |yfs| 69—SI
D
= 3 A, VDS = 10 V
Note5
Input capacitance Ciss — 520 — pF VDS = 10 V
Output capacitance Coss — 270 — pF VGS = 0
Reverse transfer capacitance Crss — 100 — pF f = 1MHz
Turn-on delay time t
d(on)
— 11 — ns VGS =10 V, ID = 3 A
Rise time t
r
— 40 — ns VDD ≅ 30 V
Turn-off delay time t
d(off)
— 110 — ns
Fall time t
f
—80—ns
Body–drain diode forward voltage V
DF
— 0.84 1.1 V IF = 5 A, VGS = 0
Note5
Body–drain diode reverse
recovery time
t
rr
— 40 — ns IF = 5 A, VGS = 0
diF/ dt = 50 A/µs
Note: 5. Pulse test
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