HIT HAT2037T Datasheet
Silicon N Channel Power MOS FET
Features
• Low on-resistance
• Capable of 2.5 V gate drive
• Low drive current
• High density mounting
Outline
HAT2037T
High Speed Power Switching
ADE-208-530 D (Z)
5th. Edition
February 1999
TSSOP–8
4
G
1
D
S
2
8
5
DD
S
S6S
3
7
5
6
7
8
4
3
2
1
1, 5, 8 Drain
2, 3, 6, 7 Source
4 Gate
HAT2037T
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
(BR)DSS
(BR)GSS
GSS
DSS
GS(off)
DS(on)
DS(on)
Forward transfer admittance |yfs| 9 14 — S ID = 3A, VDS = 10V
Input capacitance Ciss — 780 — pF VDS = 10V
Output capacitance Coss — 470 — pF VGS = 0
Reverse transfer capacitance Crss — 190 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse
t
d(on)
r
d(off)
f
DF
rr
recovery time
Note: 3. Pulse test
28——V I
±12——V I
——±10 µAVGS = ±10V, VDS = 0
——1 µAVDS = 28 V, VGS = 0
0.4 — 1.4 V VDS = 10V, I D = 1mA
— 0.021 0.028 Ω ID = 3A, VGS = 4V
— 0.027 0.038 Ω ID = 3A, VGS = 2.5V
— 20 — ns VGS = 4V, ID = 3A
— 130 — ns VDD ≈ 10V
— 155 — ns
— 160 — ns
— 0.81 1.06 V IF =5.5A, VGS = 0
— 55 — ns IF = 5.5A, VGS = 0
28 V
±12 V
5.5 A
44 A
5.5 A
1.3 W
= 10mA, VGS = 0
D
= ±100µA, VDS = 0
G
diF/ dt =20A/µs
Note3
Note3
Note3
Note3
2
Main Characteristics
HAT2037T
Power vs. Temperature Derating
2.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
1.5
1.0
0.5
Channel Dissipation Pch (W)
0
50 100 150 200
Ambient Temperature Ta (°C)
Typical Output Characteristics
50
10V
5 V
40
D
4 V
30
3 V
2.5 V
100
Maximum Safe Operation Area
30
10
D
3
DC Operation (PW < 10 s)
1
Operation in
0.3
this area is
0.1
0.03
0.01
limited by R
DS(on)
Ta = 25 °C
1 shot Pulse
0.1
0.3 1 3 10 30 100
Drain Current I (A)
Drain to Source Voltage V (V)
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Transfer Characteristics
50
40
–25°C
25°C
D
30
10 µs
100 µs
1 ms
PW = 10 ms
Note 4
DS
Tc = 75°C
20
Drain Current I (A)
10
0
246810
Drain to Source Voltage V (V)
V = 1.5 V
GS
Pulse Test
DS
20
Drain Current I (A)
10
0
1234
Gate to Source Voltage V (V)
V = 10 V
DS
Pulse Test
GS
5
3
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