HIT HAT2036R Datasheet
Silicon N Channel Power MOS FET
Features
• Low on-resistance
R
=12mΩ typ
DS(on)
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• High speed switching
tf=60ns typ.
HAT2036R
Power Switching
ADE-208-665B(Z)
Target specification 3rd. Edition
May 1998
Outline
SOP–8
4
G
56 7 8
D
D
DD
SSS
1
23
5
6
7
8
2
1
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
4
3
HAT2036R
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
(BR)DSS
GSS
DSS
GS(off)
DS(on)
DS(on)
Forward transfer admittance |yfs| 1220—S ID = 6A, VDS = 10V *
Input capacitance Ciss — 1200 — pF VDS = 10V
Output capacitance Coss — 380 — pF VGS = 0
Reverse transfer capacitance Crss — 200 — pF f = 1MHz
Total gate charge Qg — 23 — nc VDD = 10V
Gate to source charge Qgs — 4.0 — nc VGS = 10V
Gate to drain charge Qgd — 6.0 — nc ID = 12A
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse
t
d(on)
r
d(off)
f
DF
rr
recovery time
Note: 1. Pulse test
30——V I
——±0.1 µAVGS = ±20V, VDS = 0
——1 µAVDS = 30 V, VGS = 0
1.5 — 3.0 V VDS = 10V, I D = 1mA
—1215mΩ ID = 6A, VGS = 10V *
—2030mΩ ID = 6A, VGS = 4.5V *
— 40 — ns VGS = 4.5V, ID = 6A
— 300 — ns VDD ≈ 10V
—35—ns
—60—ns
— 0.9 — V IF = 12A, VGS = 0 *
— 35 — ns IF = 12A, VGS = 0
30 V
±20 V
12 A
96 A
12 A
2.5 W
= 10mA, VGS = 0
D
diF/ dt =20A/µs
1
1
1
1
2
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