HIT HAT2033RJ, HAT2033R Datasheet
HAT2033R/HAT2033RJ
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
• For Automotive Application ( at Type Code “J “)
• Low on-resistance
• Capable of 4 V gate drive
• High density mounting
Outline
ADE-208-664B (Z)
3rd. Edition
February 1999
SOP–8
4
G
56 7 8
D
D
DD
SSS
1
23
5
6
7
8
2
1
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
4
3
HAT2033R/HAT2033RJ
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current HAT2033R I
DSS
GSS
D
D(pulse)
DR
Note4
AP
Note1
HAT2033RJ 7 A
Avalanche energy HAT2033R E
Note4
AR
HAT2033RJ 4.2 mJ
Channel dissipation Pch
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg – 55 to + 150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. Value at Tch=25°C, Rg≥50Ω
60 V
± 20 V
7A
56 A
7A
——
——
2.5 W
2
HAT2033R/HAT2033RJ
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltage HAT2033R I
drain current HAT2033RJ I
Zero gate voltage HAT2033R I
drain current HAT2033RJ I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
(BR)DSS
(BR)GSS
GSS
DSS
DSS
DSS
DSS
GS(off)
DS(on)
DS(on)
Forward transfer admittance |yfs| 6.5 10 — S ID = 4 A, VDS = 10 V
Input capacitance Ciss — 740 — pF VDS = 10 V
Output capacitance Coss — 370 — pF VGS = 0
Reverse transfer capacitance Crss — 130 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse
t
d(on)
r
d(off)
f
DF
rr
recovery time
Note: 4. Pulse test
60——V ID = 10 mA, VGS = 0
± 20 — — V IG = ± 100 µA, VDS = 0
——± 10 µAVGS = ± 16 V, VDS = 0
——1 µAVDS = 60 V, VGS = 0
— — 0.1 µA
———µAVDS =4 8V , VGS = 0
——10µA Ta = 125°C
1.2 — 2.2 V VDS = 10 V, I D = 1 mA
— 0.03 0.038 Ω ID = 4 A, VGS = 10 V
— 0.04 0.053 Ω ID = 4 A, VGS = 4 V
—13—nsVGS =10 V, ID = 4 A
—55—nsVDD ≅ 30 V
— 140 — ns
—95—ns
— 0.82 1.07 V IF = 7 A, VGS = 0
Note4
— 45 — ns IF = 7 A , VGS = 0
diF/ dt = 50 A/µs
Note4
Note4
Note4
3
Loading...